SIHFR020T-E3,SIHFR020T-E3 pdf中文资料,SIHFR020T-E3引脚图,SIHFR020T-E3电路-Datasheet-电子工程世界

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IRFR020, IRFU020, SiHFR020, SiHFU020

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

5.8

Single

FEATURES

0.10

•

Dynamic dV/dt Rating

Surface Mount (IRFR020, SiHFR020)

Available in Tape and Reel

Fast Switching

Ease of Paralleling

Simple Drive Requirements

Material categorization: For definitions of

compliance please see

www.vishay.com/doc?99912

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

D S

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHFR020-GE3

IRFR020PbF

SiHFR020-E3

DPAK (TO-252)

SiHFR020TR-GE3

IRFR020TRPbF

SiHFR020T-E3

IPAK (TO-251)

SiHFU020-GE3

IRFU020PbF

SiHFU020-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak

Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).

b. V

= 25 V, starting T

= 25 °C, L = 541 μH, R

= 25

,

= 14 A (see fig. 13).

c. I



17 A, dI/dt



110 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

Mount)

= 25 °C

dV/dt

, T

stg

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

± 20

9.0

0.33

0.020

2.5

5.5

- 55 to + 150

260

W/°C

V/ns

°C

UNIT

S13-0169-Rev. C, 04-Feb-13

Document Number: 90335

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFR020, IRFU020, SiHFR020, SiHFU020

www.vishay.com

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient

(PCB Mount)

Maximum Junction-to-Case (Drain)

SYMBOL

thJA

thJC

MIN.

TYP.

MAX.

110

3.0

°C/W

UNIT

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS

= 25 °C, unless otherwise noted)

PARAMETER

Static

Drain-Source Breakdown Voltage

Temperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulsed Diode Forward

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

GS(th)

GSS

DSS

DS(on)

iss

oss

rss

d(on)

d(off)

= 0 V, I

= 250 μA

Reference to 25 °C, I

= 1 mA

= V

, I

= 250 μA

= ± 20 V

= 60 V, V

= 0 V

= 48 V, V

= 0 V, T

= 125 °C

= 10 V

= 8.4 A

= 25 V, I

= 8.4 A

2.0

6.2

0.073

640

360

4.5

7.5

4.0

± 100

250

0.10

5.8

V/°C

μA



= 0 V,

= 25 V,

f = 1.0 MHz, see fig. 5

= 17 A, V

= 48 V,

see fig. 6 and 13

= 10 V

= 30 V, I

= 17 A,

= 18

,

= 1.7

,

see fig. 10

Between lead,

6 mm (0.25") from

package and center of

die contact

0.29

1.5

180

0.64

μC

= 25 °C, I

= 14 A, V

= 0 V

= 25 °C, I

= 17 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by L

and L

)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).

b. Pulse width



300 μs; duty cycle



2 %.

S13-0169-Rev. C, 04-Feb-13

Document Number: 90335

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFR020, IRFU020, SiHFR020, SiHFU020

www.vishay.com

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, T

= 25 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, T

= 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0169-Rev. C, 04-Feb-13

Document Number: 90335

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFR020, IRFU020, SiHFR020, SiHFU020

www.vishay.com

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

S13-0169-Rev. C, 04-Feb-13

Document Number: 90335

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFR020, IRFU020, SiHFR020, SiHFU020

www.vishay.com

Vishay Siliconix

D.U.T.

- V

10 V

Pulse width

≤

1 µs

Duty factor

≤

0.1 %

Fig. 10 - Switching Time Test Circuit

90 %

10 %

d(on)

d(off)

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Switching Time Waveforms

Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S13-0169-Rev. C, 04-Feb-13

Document Number: 90335

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

参数对比

与SIHFR020T-E3相近的元器件有：IRFR020_10、SIHFR020-GE3、SIHFR020TR-GE3、SIHFU020-GE3、SIHFR020、SIHFR020-E3、SIHFU020、SIHFU020-E3。描述及对比如下：

型号	SIHFR020T-E3	IRFR020_10	SIHFR020-GE3	SIHFR020TR-GE3	SIHFU020-GE3	SIHFR020	SIHFR020-E3	SIHFU020	SIHFU020-E3
描述	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
元件数量	1	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	3	2	2	3	3
表面贴装	YES	YES	YES	YES	NO	YES	YES	NO	NO
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
是否无铅	不含铅	-	-	-	-	含铅	不含铅	含铅	不含铅
是否Rohs认证	符合	-	-	-	-	不符合	符合	不符合	符合
厂商名称	Vishay(威世)	-	Vishay(威世)	Vishay(威世)	-	Vishay(威世)	Vishay(威世)	-	-
零件包装代码	TO-252	-	-	-	-	TO-252	TO-252	TO-251	TO-251
包装说明	SMALL OUTLINE, R-PSSO-G2	-	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
针数	3	-	-	-	-	3	3	3	3
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	FAST SWITCHING	-	-	-	-	FAST SWITCHING	FAST SWITCHING	FAST SWITCHING	FAST SWITCHING
雪崩能效等级（Eas）	91 mJ	-	91 mJ	91 mJ	91 mJ	91 mJ	91 mJ	91 mJ	91 mJ
外壳连接	DRAIN	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V	-	60 V	60 V	60 V	60 V	60 V	60 V	60 V
最大漏极电流 (Abs) (ID)	14 A	-	14 A	14 A	14 A	14 A	14 A	14 A	14 A
最大漏极电流 (ID)	14 A	-	14 A	14 A	14 A	14 A	14 A	14 A	14 A
最大漏源导通电阻	0.1 Ω	-	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252	-	TO-252AA	TO-252AA	TO-251AA	TO-252	TO-252	TO-251	TO-251
JESD-30 代码	R-PSSO-G2	-	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3
JESD-609代码	e3	-	-	-	-	e0	e3	e0	e3
工作模式	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE
峰值回流温度（摄氏度）	260	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	240	260	240	260
极性/信道类型	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	42 W	-	42 W	42 W	42 W	42 W	42 W	42 W	42 W
最大脉冲漏极电流 (IDM)	56 A	-	56 A	56 A	56 A	56 A	56 A	56 A	56 A
认证状态	Not Qualified	-	-	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
端子面层	Matte Tin (Sn)	-	-	-	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
处于峰值回流温度下的最长时间	40	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30	40	30	40

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