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SIHFU020

14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
14 A, 60 V, 0.1 ohm, N沟道, 硅, POWER, 场效应管, TO-252AA

器件类别：分立半导体    晶体管   

厂商名称：Vishay(威世)

厂商官网：http://www.vishay.com

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
零件包装代码
TO-251
包装说明
IN-LINE, R-PSIP-T3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
FAST SWITCHING
雪崩能效等级（Eas）
91 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
60 V
最大漏极电流 (Abs) (ID)
14 A
最大漏极电流 (ID)
14 A
最大漏源导通电阻
0.1 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-251
JESD-30 代码
R-PSIP-T3
JESD-609代码
e0
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度（摄氏度）
240
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
42 W
最大脉冲漏极电流 (IDM)
56 A
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
IRFR020, IRFU020, SiHFR020, SiHFU020
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
25
5.8
11
Single
D
FEATURES
60
0.10
•
•
•
•
•
•
•
Dynamic dV/dt Rating
Surface Mount (IRFR020, SiHFR020)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
DPAK
(TO-252)
D
D
IPAK
(TO-251)
DESCRIPTION
G
G
S
G
D S
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR020-GE3
IRFR020PbF
SiHFR020-E3
DPAK (TO-252)
SiHFR020TR-GE3
IRFR020TRPbF
a
SiHFR020T-E3
a
IPAK (TO-251)
SiHFU020-GE3
IRFU020PbF
SiHFU020-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 541 μH, R
g
= 25
,
I
AS
= 14 A (see fig. 13).
c. I
SD
17 A, dI/dt
110 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Mount)
e
T
C
= 25 °C
T
A
= 25 °C
E
AS
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
60
± 20
14
9.0
56
0.33
0.020
91
42
2.5
5.5
- 55 to + 150
260
W/°C
mJ
W
V/ns
°C
A
UNIT
V
S13-0169-Rev. C, 04-Feb-13
Document Number: 90335
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR020, IRFU020, SiHFR020, SiHFU020
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 8.4 A
b
V
DS
= 25 V, I
D
= 8.4 A
60
-
2.0
-
-
-
-
6.2
-
-
-
-
-
-
-
-
-
-
-
0.073
-
-
-
-
-
-
640
360
79
-
-
-
13
58
25
42
4.5
7.5
-
-
4.0
± 100
25
250
0.10
-
-
-
-
25
5.8
11
-
-
-
-
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 17 A, V
DS
= 48 V,
see fig. 6 and 13
b
pF
V
GS
= 10 V
nC
V
DD
= 30 V, I
D
= 17 A,
R
G
= 18
,
R
D
= 1.7
,
see fig. 10
b
ns
Between lead,
6 mm (0.25") from
package and center of
die contact
c
D
-
G
nH
-
S
-
-
-
-
-
-
-
-
-
88
0.29
14
A
56
1.5
180
0.64
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Pulse width
300 μs; duty cycle
2 %.
S13-0169-Rev. C, 04-Feb-13
Document Number: 90335
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR020, IRFU020, SiHFR020, SiHFU020
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0169-Rev. C, 04-Feb-13
Document Number: 90335
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR020, IRFU020, SiHFR020, SiHFU020
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S13-0169-Rev. C, 04-Feb-13
Document Number: 90335
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR020, IRFU020, SiHFR020, SiHFU020
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
- V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10 - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Switching Time Waveforms
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S13-0169-Rev. C, 04-Feb-13
Document Number: 90335
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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参数对比
与SIHFU020相近的元器件有：IRFR020_10、SIHFR020-GE3、SIHFR020TR-GE3、SIHFU020-GE3、SIHFR020、SIHFR020-E3、SIHFR020T-E3、SIHFU020-E3。描述及对比如下：
型号 SIHFU020 IRFR020_10 SIHFR020-GE3 SIHFR020TR-GE3 SIHFU020-GE3 SIHFR020 SIHFR020-E3 SIHFR020T-E3 SIHFU020-E3
描述 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
元件数量 1 1 1 1 1 1 1 1 1
端子数量 3 2 2 2 3 2 2 2 3
表面贴装 NO YES YES YES NO YES YES YES NO
端子形式 THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
是否无铅 含铅 - - - - 含铅 不含铅 不含铅 不含铅
是否Rohs认证 不符合 - - - - 不符合 符合 符合 符合
零件包装代码 TO-251 - - - - TO-252 TO-252 TO-252 TO-251
包装说明 IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
针数 3 - - - - 3 3 3 3
Reach Compliance Code unknow - unknow unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FAST SWITCHING - - - - FAST SWITCHING FAST SWITCHING FAST SWITCHING FAST SWITCHING
雪崩能效等级（Eas） 91 mJ - 91 mJ 91 mJ 91 mJ 91 mJ 91 mJ 91 mJ 91 mJ
外壳连接 DRAIN - DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V - 60 V 60 V 60 V 60 V 60 V 60 V 60 V
最大漏极电流 (Abs) (ID) 14 A - 14 A 14 A 14 A 14 A 14 A 14 A 14 A
最大漏极电流 (ID) 14 A - 14 A 14 A 14 A 14 A 14 A 14 A 14 A
最大漏源导通电阻 0.1 Ω - 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-251 - TO-252AA TO-252AA TO-251AA TO-252 TO-252 TO-252 TO-251
JESD-30 代码 R-PSIP-T3 - R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
JESD-609代码 e0 - - - - e0 e3 e3 e3
工作模式 ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE - SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE
峰值回流温度（摄氏度） 240 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 240 260 260 260
极性/信道类型 N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 42 W - 42 W 42 W 42 W 42 W 42 W 42 W 42 W
最大脉冲漏极电流 (IDM) 56 A - 56 A 56 A 56 A 56 A 56 A 56 A 56 A
认证状态 Not Qualified - - - - Not Qualified Not Qualified Not Qualified Not Qualified
端子面层 Tin/Lead (Sn/Pb) - - - - Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
处于峰值回流温度下的最长时间 30 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30 40 40 40
厂商名称 - - Vishay(威世) Vishay(威世) - Vishay(威世) Vishay(威世) Vishay(威世) -
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