型号
- 型号
- 关键词
Small Signal Field-Effect Transistor, 0.19A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
厂商名称：Vishay(威世)
下载文档| 型号 | VN2010L-2TA | VN2010L18 | VN2010L18-2 | VN2010L18-1 | VN2010L-1TR1 | RNR60E2640BM | RNR60E2640BSBSL | RNR60E2640BSRJ7 |
|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.19A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | 190mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA | Small Signal Field-Effect Transistor, 0.19A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | Small Signal Field-Effect Transistor, 0.19A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | Small Signal Field-Effect Transistor, 0.19A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | RESISTOR, METAL FILM, 0.125 W, 0.1 %, 25 ppm, 264 ohm, THROUGH HOLE MOUNT, AXIAL LEADED | Fixed Resistor, Metal Film, 0.125W, 264ohm, 250V, 0.1% +/-Tol, 25ppm/Cel, Through Hole Mount, AXIAL LEADED | RESISTOR, METAL FILM, 0.125 W, 0.1 %, 25 ppm, 264 ohm, THROUGH HOLE MOUNT, AXIAL LEADED |
| 包装说明 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | Axial, | AXIAL LEADED | Axial, |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | compliant | not_compliant | compliant |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 2 | 2 | 2 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 175 °C | 175 °C | 175 °C |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | Axial | Axial | Axial |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - | - |
| 最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V | - | - | - |
| 最大漏极电流 (ID) | 0.19 A | 0.19 A | 0.19 A | 0.19 A | 0.19 A | - | - | - |
| 最大漏源导通电阻 | 10 Ω | 10 Ω | 10 Ω | 10 Ω | 10 Ω | - | - | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - | - |
| 最大反馈电容 (Crss) | 15 pF | 15 pF | 15 pF | 15 pF | 15 pF | - | - | - |
| JEDEC-95代码 | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | - | - | - |
| JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | - | - | - |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | - | - | - |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | - |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | TUBULAR PACKAGE | - | - |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | - | - |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | - | - |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - | - | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | - | - | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - | - |
电机驱动控制（Motor Control）
NXP MCU
单片机
EE_FPGA学习乐园
模拟与混合信号
嵌入式系统
