<~>E.ml-L-ona.u.cko'i u-^i
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Li
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN POWER
TRANSISTROS
2N1015/2N1016
iymbo
Inches
...
Mm.
.500
.045
.140
7.5 Amperes
30-250 Volts
Millimeters
Max.
.560
.060
.170
Min.
Max.
A
08
d
0D
0D,
<t>0,
e
e,
H
12.70
1.14
3.56
14.22
1.52
4.32
1.240
.730
.360
.180
.014
.140
.130
.550
.550
.810
.105
.480
.050
1.280
.770
31.50
18.54
9.14
4.57
1.125
.400
.200
.025
.170
.190
.590
.590
.850
.140
.520
.070
32.51
19.56
28.58
10.16
5.08
.36
3.56
3.30
.64
4.32
4.83
\
L
N
q
13.97
13.97
20.57
2.67
14.99
14.99
21.59
3.56
Q
s
«T
0W
12.19
1.27
13.21
1.78
ViB-24 UNF-2A
Conforms to TO-82 Outline
Features:
• Gold Alloy Process
• No forward bias secondary breakdown to
100 Volts
• High reverse bias S.O.A. for inductive loads
• Low thermal resistance with copper base
• 150 watt dissipation
• Protection from thermal fatigue with hard
solder and molydenum construction
• 25 volt VEBO
•
LOW V CE Isat)
Finish—Nickel Plate.
Approx. Weight—.9 02. (25 g).
1. Complete threads to extend to within
2'/4 threads of seating plane.
2. Contour and angular orientation of
terminals is undefined.
3. Pitch.diameter of Y,.-24 UNf-2A
(coated) threads (ASA B1.1-1 960).
Maximum Ratings
Voltage
JEDEC
Applications:
• High Power Switching
• Amplifiers
• Servo Systems
• Regulators
• Modulators
2N1015 +
2N1015A +
2N1015B +
2N1015C+
2N1015D*
2N1015E+
2N1016 +
2N1016A+
2N1016B+
2N1016C*
2N1016D+
2N1016E+
VCEO isos)
30
60
100
150
200
250
• Lifetime Guarantee
Maximum Ratings and Characteristics
T c = 25°C unless specified
* Operating and storage temperature
Collector-emitter sustaining voltage
* Emitter-base voltage
* Continous collector current
* Continous base current
* Thermal resistance
* Power dissipation Tc = 45°C
Power dissipation Tc = 100°C
• JEDEC Registered Parameters
VcEO(sus)
JEDEC 2IM1015.
2IM1016
«• ^H
°C
Volts
Volts
Amps
Amps
°C/W
— 65 TO 150
30 TO 250
25
7.5
5
.87
150
87
VEBO
Ic
IB
Rejc
FT
Pr
Watts
Watts
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ
Semi-Conductors
encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Electrical Characteristics
2N1016/2N1016
T
C
=25°C unless otherwise specified
Symbol
Minimum
••
..
••
..
...
..
250
*10
..
..
*10
..
..
Typical
2
3
3
7
..
..
••
14
1.15
25
18
1.25
30
Max. Units
*20
*20
....
....
15
Q
5
mAdc
mAdc
jusec
^sec
Adc
j
ou
|
e
Khz
Collector current at V
C
EX = VC
E
(from max.-ratings), Tj = 150°C, V
BE
= -1.5 Vdc
ICEX
Emitter current at V
E
B=25 Vdc, lc=0, Tj = 150°C
...... I
EB
Q
Switching time, delay plus rise time
td
+t
r
Storage plus fall time
•
'.. t
s
+tf
Second breakdown. Collector Current, VCE = 100V., Tc = 45°C
(one second test), forward bias, Amperes
IS/B
^econd breakdown energy, base reverse biased, L = 250 mh.,
E
S/B
RB = 50 ohms, VBE =-6.0 volts, Ic = 2.0 Amperes, Joules
Gain-bandwidth, VCE = 10 volts, Ic = 0.5 Amps, Kilohertz
ft
2 N1015
DC current gain at V
C E
=4 Vdc, lc = 2 Adc
hp
E
Base voltage, at l
c
= 2 Adc, I
B
= 300 mAdc
V
BE
(sat)
Beta cut-off frequency
fhfe
2N1016
DC current gain at VCE =4 Vdc, Ic = 5 Adc
n
FE
Base voltage, at lc = 5 Adc, I
B
= 750 mAdc
V
BE
(sat)
Beta cut-off frequency
fhfa
*JEDC registered parameters.
....
....
Vdc
kHz
. .'. .
....
Vdc
kHz
Typical Characteristics
. . : :.
_•.
so
~ -"
:
===
: -=
• ' ' :
:~'i
SAFE OPERATING AREA
10
;- rr
60
\ • -
— V
CE
* » Volts
: : : :
:
T
c
=2
5?C
?N
MAX. IC —
\
-l'~!
:
-
:
Ser es
\
— =
-
\
^E=
EEE
:
-j
-
-
- f^r
•.-;.;
:
:=
\ *
^'
\^
s
s
<
S
.
?
^\5*
40
V
X
2NIOI5
::
-•<•—_
t
X^j
^
vC
$ X
o^l
7.
§
N
::-^::
.. — ._
rr —
^
\y
!\\
for all
be used
8
ao
*S>i.
"^n
0
- .
i
2
4
5
6
7
Collector Current,I
Ci
Amperes
Typical dc gain versus collector current at Tc = 25°C.
_TT_._!_
1
Series
"
f"^w
; ; -.
-+'•'••_
1.0
\
|-1
=
1
-r—r
•
—-
--~
r—
m
T^
—i
1
-
~~-
U.^^-
0.5
m
=•3
-H—
Maximum Forward Bias
Safe Operating Area
Single Non-repetitive Pu se
Tc = 45°C
These forward Bias Curves
::::
iu
11
- • t-/^-
\.
>5
1.5
Transistors except the
maximum collector-emitter
voltage cannot be exceeded.
0.1
I
10
I I I
50
100
X
2
.'_".:":::
:•„:
i\2
'•
—
:~.~
r
m
;.rrr_
_:-_:-
m
200
S
Collector Emitter Voltage, VCE. Volts
,7 5
I.
3
5
1
Bose Voltage, V
BE
,Volts
Typical base voltage vs. Collector Current
characteristics at To = 25°C.
