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ALD1116PAXXXX

Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

器件类别:分立半导体    晶体管   

厂商名称:ALD [Advanced Linear Devices]

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器件参数
参数名称
属性值
厂商名称
ALD [Advanced Linear Devices]
包装说明
IN-LINE, R-PDIP-T8
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW THRESHOLD, HIGH INPUT IMPEDANCE
配置
COMMON SUBSTRATE, 2 ELEMENTS
最小漏源击穿电压
12 V
最大漏源导通电阻
500 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PDIP-T8
元件数量
2
端子数量
8
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
极性/信道类型
N-CHANNEL
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
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参数对比
与ALD1116PAXXXX相近的元器件有:ALD1106PBXXXX、ALD1106DBMXXXX、ALD1106SBXXXX、ALD1116DAMXXXX、ALD1116SAXXXX。描述及对比如下:
型号 ALD1116PAXXXX ALD1106PBXXXX ALD1106DBMXXXX ALD1106SBXXXX ALD1116DAMXXXX ALD1116SAXXXX
描述 Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
包装说明 IN-LINE, R-PDIP-T8 IN-LINE, R-PDIP-T14 IN-LINE, R-CDIP-T14 SMALL OUTLINE, R-PDSO-G14 IN-LINE, R-CDIP-T8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown unknow unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW THRESHOLD, HIGH INPUT IMPEDANCE LOW THRESHOLD, HIGH INPUT IMPEDANCE LOW THRESHOLD, HIGH INPUT IMPEDANCE LOW THRESHOLD, HIGH INPUT IMPEDANCE LOW THRESHOLD, HIGH INPUT IMPEDANCE LOW THRESHOLD, HIGH INPUT IMPEDANCE
配置 COMMON SUBSTRATE, 2 ELEMENTS COMMON SUBSTRATE, 4 ELEMENTS COMMON SUBSTRATE, 4 ELEMENTS COMMON SUBSTRATE, 4 ELEMENTS COMMON SUBSTRATE, 2 ELEMENTS COMMON SUBSTRATE, 2 ELEMENTS
最小漏源击穿电压 12 V 12 V 12 V 12 V 12 V 12 V
最大漏源导通电阻 500 Ω 500 Ω 500 Ω 500 Ω 500 Ω 500 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDIP-T8 R-PDIP-T14 R-CDIP-T14 R-PDSO-G14 R-CDIP-T8 R-PDSO-G8
元件数量 2 4 4 4 2 2
端子数量 8 14 14 14 8 8
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO YES NO YES
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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