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BC860

30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
30 V, PNP, 硅, 小信号晶体管

器件类别：分立半导体    晶体管   

厂商名称：NXP(恩智浦)

厂商官网：https://www.nxp.com

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
NXP(恩智浦)
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknow
ECCN代码
EAR99
Is Samacsys
N
其他特性
LOW NOISE
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
45 V
配置
SINGLE
最小直流电流增益 (hFE)
125
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
VCEsat-Max
0.65 V
Base Number Matches
1
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
BC859; BC860
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 May 28
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
MARKING
TYPE
NUMBER
BC859B
BC859C
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BC859B
BC859C
BC860B
BC860C
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING
CODE
(1)
4B*
4C*
TYPE
NUMBER
BC860B
BC860C
MARKING
CODE
(1)
4F*
4G*
Top view
handbook, halfpage
BC859; BC860
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BC859
BC860
V
CEO
collector-emitter voltage
BC859
BC860
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
MIN.
BC859; BC860
MAX.
−30
−50
−30
−45
−5
−100
−200
−200
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
VALUE
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC859B; BC860B
BC859C; BC860C
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC859B; BC860B;
BC859C; BC860C
noise figure
BC859B; BC860B;
BC859C; BC860C
Notes
1. V
BEsat
decreases by about
−1.7
mV/K with increasing temperature.
2. V
BE
decreases by about
−2
mV/K with increasing temperature.
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−0.5
mA; note 1
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
C
=
−2
mA; V
CE
=
−5
V; note 2
I
C
=
−10
mA; V
CE
=
−5
V; note 2
I
E
= I
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= I
c
= 0; V
EB
=
−500
mV; f = 1 MHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 30 Hz to 15 kHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V;
see Figs 2 and 3
BC859; BC860
MIN.
−
−
−
220
420
−
−
−
−
−600
−
−
−
TYP.
−1
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
10
−
−
MAX.
−15
−4
−100
475
800
−300
−650
−
−
−750
−820
−
−
−
4
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 100
−
−
−
4
dB
2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859; BC860
handbook, full pagewidth
400
MBH727
hFE
VCE =
−5
V
300
200
100
0
−10
−2
BC859B; BC860B.
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
600
MBH728
hFE
500
VCE =
−5
V
400
300
200
100
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC859C; BC860C.
Fig.3 DC current gain; typical values.
2004 Jan 16
5
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参数对比
与BC860相近的元器件有：BC859、BC859B、BC859C、BC860B、BC860C。描述及对比如下：
型号 BC860 BC859 BC859B BC859C BC860B BC860C
描述 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Reach Compliance Code unknow unknow compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 45 V 30 V 30 V 30 V 45 V 45 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 125 125 220 420 220 420
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.65 V 0.65 V 0.65 V 0.65 V 0.65 V 0.65 V
厂商名称 NXP(恩智浦) NXP(恩智浦) - NXP(恩智浦) - NXP(恩智浦)
是否无铅 - - 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 - - 符合 符合 符合 符合
零件包装代码 - - SOT-23 SOT-23 SOT-23 SOT-23
针数 - - 3 3 3 3
JEDEC-95代码 - - TO-236AB TO-236AB TO-236AB TO-236AB
JESD-609代码 - - e3 e3 e3 e3
湿度敏感等级 - - 1 1 1 1
峰值回流温度（摄氏度） - - 260 260 260 260
最大功率耗散 (Abs) - - 0.25 W 0.3 W 0.3 W 0.3 W
端子面层 - - Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
处于峰值回流温度下的最长时间 - - 30 30 30 30
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