MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
CM50MX-24A
¡I
C .....................................................................
50A
¡V
CES .........................................................
1200V
¡CIB
(3-phase Converter +
3-phase Inverter + Brake)
¡Flatbase
Type / Insulated Package /
Copper base plate
¡RoHS
Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
OUTLINE DRAWING & CIRCUIT DIAGRAM
121.7
＊118.1
110
±0.5
99
94.5
Dimensions in mm
1.15
0.65
4-φ5.5 MOUNTING HOLES
20.5
17
13
7
(7.4)
1.2
＊13.09
＊16.9
＊28.33
＊32.14
＊47.38
＊51.19
＊66.43
＊70.24
＊81.67
＊85.48
＊89.29
＊93.1
＊96.91
＊4.06
0
(3.81)
TERMINAL t = 0.8
φ4.3
＊4.2
0
54
55
56
57
58
59
60
61
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
3.75
0
30
29
28
27
26
25
24
23
＊11.66
＊15.48
＊23.1
＊26.9
＊34.52
＊38.34
＊58.4
39
50
±0.5
57.5
62
＊15.48
＊19.28
＊30.72
＊34.52
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
(3)
(7.75)
＊15
＊18.8
＊30.24
＊34.04
＊45.48
＊49.28
＊60.72
＊64.52
＊75.96
＊79.76
＊91.2
＊95
A
0.8
＊Pin
positions
with tolerance
0
12.5
SECTION A
1.5
φ2.5
φ2.1
φ
0.5
0.8
3.5
LABEL
Tolerance otherwise specified
P(52~53) P1(54~55)
NTC
TH1(29)
GuP(49)
GvP(44)
GwP(39)
Division of Dimension
0.5
TH2(28)
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
to
to
to
to
to
3
6
30
120
400
EuP(48)
R(1~2) S(5~6) T(9~10)
B(24~25)
GB(35)
N(57~58) N1(60~61)
GuN(34)
EvP(43)
U(13~14)
GvN(33)
EwP(38)
V(17~18)
GwN(32)
W(21~22)
over
over
over
3
6
30
over 120
E(31)
* Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection.
CIRCUIT DIAGRAM
Jan. 2009
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS
INVERTER PART
Symbol
V
CES
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
(Tj = 25
°
C, unless otherwise specified)
Conditions
G-E Short
C-E Short
DC, T
C
= 97°C
Collector current
Pulse
Maximum collector dissipation T
C
= 25°C
Emitter current
T
C
= 25°C
(Free wheeling diode forward current) Pulse
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
Rating
1200
±20
50
100
355
50
100
Unit
V
A
W
A
BRAKE PART
Symbol
V
CES
V
GES
I
C
I
CRM
P
C
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Conditions
G-E Short
C-E Short
DC, T
C
= 106°C
Collector current
Pulse
Maximum collector dissipation T
C
= 25°C
Repetitive peak reverse voltage
T
C
= 25°C
Forward current
Pulse
Rating
1200
±20
30
60
260
1200
30
60
Unit
V
A
W
V
A
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
CONVERTER PART
Symbol
V
RRM
E
a
I
O
I
FSM
I
2
t
Parameter
Conditions
Repetitive peak reverse voltage
Recommended AC input voltage
(Note. 1)
3-phase full wave rectifying, T
C
= 141°C
DC output current
The sine half wave 1 cycle peak value, f = 60Hz,
Surge forward current
non-repetitive
Value for one cycle of surge current
Current square time
Rating
1600
440
50
500
1040
Unit
V
Vrms
A
A
2S
MODULE
Symbol
T
j
T
stg
V
iso
—
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
Torque strength
Weight
Conditions
Rating
–40 ~ +150
–40 ~ +125
2500
±0
~ +100
2.5 ~ 3.5
270
Unit
°C
Vrms
μm
N·m
g
Terminals to base plate, f = 60Hz, AC for 1 minute
(Note. 8)
On the centerline X, Y
Mounting
M5 screw
(Typical)
Note. 8: The base plate flatness measurement points are in the following figure.
Heat sink side
Y
+
–
+ convex
：
–
concave
：
X
–
+
Heat sink side
Jan. 2009
2
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS
INVERTER PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
Parameter
(Tj = 25
°
C, unless otherwise specified)
Conditions
V
CE
= V
CES
, V
GE
= 0V
Collector cutoff current
Gate-emitter threshold voltage I
C
= 5mA, V
CE
= 10V
Gate leakage current
±V
GE
= V
GES
, V
CE
= 0V
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
I
C
= 50A, V
GE
= 15V
I
C
= 50A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 50A, V
GE
= 15V
V
CC
= 600V, I
C
= 50A
V
GE
=
±15V,
R
G
= 6.2Ω
Inductive load
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
(I
E
= 50A)
I
E
= 50A, V
GE
= 0V
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
V
EC(Note.3)
Emitter-collector voltage
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
I
E
= 50A, V
GE
= 0V
Thermal resistance
per 1/6 IGBT
(Note. 1)
(Junction to case)
per 1/6 free wheeling diode
Internal gate resistance
T
C
= 25°C, per switch
External gate resistance
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Limits
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
250
—
—
—
—
—
2
2.6
2.16
2.5
—
—
0
—
Max.
1
8
0.5
2.6
—
—
8.5
0.75
0.17
—
100
50
300
600
200
—
3.4
—
—
0.35
0.63
—
62
Unit
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
BRAKE PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
I
RRM(Note.3)
Parameter
Conditions
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
Limits
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
150
—
2.6
2.16
2.5
—
—
0
—
Max.
1
8
0.5
2.6
—
—
5.1
0.45
0.1
—
1
3.4
—
—
0.48
0.79
—
100
Unit
mA
V
μA
V
V
CE
= V
CES
, V
GE
= 0V
Collector cutoff current
Gate-emitter threshold voltage I
C
= 3mA, V
CE
= 10V
Gate leakage current
±V
GE
= V
GES
, V
CE
= 0V
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
I
C
= 30A, V
GE
= 15V
I
C
= 30A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 30A, V
GE
= 15V
V
R
= V
RRM
I
F
= 30A
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
nF
nC
mA
V
V
FM(Note.3)
Forward voltage drop
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
I
F
= 30A
per IGBT
Thermal resistance
(Note. 1)
per Clamp diode
(Junction to case)
T
C
= 25°C
Internal gate resistance
External gate resistance
K/W
Ω
CONVERTER PART
Symbol
I
RRM
V
F
R
th(j-c)
Parameter
Conditions
Min.
—
—
—
Limits
Typ.
—
1.2
—
Max.
6
1.6
0.33
Unit
mA
V
K/W
Repetitive peak reverse current V
R
= V
RRM
, T
j
= 150°C
I
F
= 50A
Forward voltage drop
Thermal resistance
(Note. 1) per Diode
(Junction to case)
Jan. 2009
3
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
NTC THERMISTOR PART
Symbol
R
ΔR/R
B
(25/50)
P
25
Parameter
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
Min.
4.85
–7.3
—
—
Limits
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Unit
kΩ
%
K
mW
(Note. 7)
MODULE
Symbol
R
th(c-f)
Parameter
Conditions
(Note. 2)
Min.
—
Limits
Typ.
0.015
Max.
—
Unit
K/W
Contact thermal resistance
Thermal grease applied
(Note. 1) per 1 module
(Case to fin)
Note.1: Case temperature (T
C
), heat sink temperature (T
f
) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of
λ
= 0.9W/(m·K).
3: I
E
, I
ERM
, V
EC
, t
rr
, Q
rr
and E
rr
represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
I
F
, I
FRM
, V
F
, V
RRM
and I
RRM
represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed Tjmax rating.
5: Junction temperature (T
j
) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for V
CE(sat)
and V
EC
)
1
7:
B
(25/50)
= In( R
25
)/( 1
)
T
50
R
50
T
25
R
25
: resistance at absolute temperature T
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
Chip Location (Top view)
(121.7)
(110)
Dimensions in mm (tolerance:
±1mm)
38.8
47.9
63.9
70.4
75.9
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
85.8
91.3
97.6
101.2
102.8
29.7
0
0
54
(62)
(50)
27.4
28.4
55
56
57
58
59
60
61
Tr
Br
30
29
28
27
26
25
24
23
CR C R C R
RN S N T N
CR C R C R
RP S P T P
1
2
3
4
5
6
7
8
42.0
Tr
Tr Di Tr
UP
VP B r WP Th
Di Tr Di Tr Di Tr
UP UN VP VN WP WN
Di
Di
Di
WN
UN
VN
9 10 11 12 13 14 15 16 17 18 19 20 21 22
18.6
26.7 (Tr/UP, Tr/VP, Tr/WP)
27.4 (Di/Br)
27.9 (Th)
34.9 (Di/UP, Di/VP, Di/WP)
35.6 (Tr/UN, Tr/VN, Tr/WN)
43.3
26.7
35.8
44.9
62.7
72.1
78.1
83.1
86.5
93.5
99.4
0
LABEL SIDE
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor
Jan. 2009
4
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
P1
V
V
GE
= 15V
GuP
EuP
P1
I
C
V
GE
= 0V
GuP
EuP
P1
U
V
GE
= 0V
GuN
E
U
V
GE
= 15V
GuN
E
B
I
C
V
V
GE
= 15V
GB
E
I
C
N1
V
N1
N1
P side Inverter part T
r
(example of U arm)
V
G*E*
= 0V
(GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E)
N side Inverter part T
r
(example of U arm)
V
G*E*
= 0V
(GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E)
V
CE(sat)
test circuit
B
r
T
r
V
G*E*
= 0V
(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-E, GvN-E, GwN-E)
P1
V
V
GE
= 0V
GuP
EuP
P1
I
E
V
GE
= 0V
GuP
EuP
P1
V
I
F
B
U
U
V
GE
= 0V
GuN
E
V
GE
= 0V
GuN
E
I
E
N1
V
V
GE
= 0V
GB
E
N1
P side Inverter part D
i
(example of U arm)
V
G*E*
= 0V
(GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E)
N side Inverter part D
i
(example of U arm)
V
G*E*
= 0V
(GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E)
V
EC
/V
FM
test circuit
N1
B
r
D
i
V
G*E*
= 0V
(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-E, GvN-E, GwN-E)
Arm
I
E
0V
Load
V
GE
90%
0%
I
E
t
rr
–
V
GE
+
+
V
GE
0V
–
V
GE
V
CC
I
C
90%
0A
t
R
G
V
GE
V
CE
I
C
0A
t
d(on)
t
r
t
d(off)
t
f
I
rr
10%
1/2
✕
I
rr
Q
rr
= 1/2
✕
I
rr
✕
t
rr
Switching time test circuit and waveforms
t
rr,
Q
rr
test waveform
Jan. 2009
5
