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FJPF5021OTU

TRANS NPN 500V 5A TO-220F

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
LEAD FREE, TO-220F, 3 PIN
制造商包装代码
221AT
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
6 weeks
最大集电极电流 (IC)
5 A
集电极-发射极最大电压
500 V
配置
SINGLE
最小直流电流增益 (hFE)
20
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
40 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
15 MHz
Base Number Matches
1
文档预览
Is Now Part of
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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FJPF5021
FJPF5021
High Voltage and High Reliability
• High Speed Switching : t
F
= 0.1µs(Typ.)
• Wide SOA
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
800
500
7
5
10
2
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 2.5A, I
B1
= -I
B2
= 1A
L = 1mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.6A
V
CC
= 200V
I
C
= 5I
B1
= -2.5I
B2
= 4A
R
L
= 50Ω
80
15
0.5
3
0.1
0.3
15
8
Min.
800
500
7
500
10
10
50
1
1.5
V
V
pF
MHz
µs
µs
µs
Typ.
Max.
Units
V
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE1
R
15 ~ 30
O
20 ~ 40
Y
30 ~ 50
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJPF5021
Typical Characteristics
5
100
I
B
= 800mA
I
B
= 600mA
I
B
= 400mA
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
4
I
B
= 1.2A
3
I
B
= 200mA
h
FE
, DC CURRENT GAIN
I
B
= 1A
10
2
I
B
= 100mA
I
B
= 50mA
1
I
B
= 20mA
0
0
2
4
6
I
B
= 0
8
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
= 5 I
B
t
STG
1
V
BE
(sat)
t
ON
, t
STG
, t
F
[
µ
s], TIME
1
t
ON
0.1
t
F
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
6
100
V
CE
= 5V
5
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
10
I
CP
(max)
I
C
(max)
50
µ
s
s
m
10
s
1m
0
µ
50
4
s
DC
1
3
2
0.1
1
0
0.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJPF5021
Typical Characteristics
(Continued)
100
60
I
C
[A], COLLECTOR CURRENT
10
P
C
[W], POWER DISSIPATION
Vcc=50V,
I
B1
=1A, I
B2
= -1A
L = 1mH
50
40
1
30
20
0.1
10
0.01
10
100
1000
10000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
A
3.40
3.20
B
10.36
9.96
7.00
B
3.28
3.08
2.66
2.42
0.70
SEE NOTE "F"
6.88
6.48
SEE NOTE "F"
1 X 45°
16.00
15.60
B
16.07
15.67
(3.23) B
1
2.14
10.05
9.45
3
1.47
1.24
0.90
0.70
0.50
M
30°
0.45
0.25
2.54
2.54
B
0.60
0.45
A
2.96
2.56
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
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参数对比
与FJPF5021OTU相近的元器件有:FJPF5021YTU、FJPF5021O、FJPF5021R、FJPF5021RTSTU、FJPF5021RTU。描述及对比如下:
型号 FJPF5021OTU FJPF5021YTU FJPF5021O FJPF5021R FJPF5021RTSTU FJPF5021RTU
描述 TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F
晶体管类型 - NPN - NPN NPN NPN
电流 - 集电极(Ic)(最大值) - 5A - 5A 5A 5A
电压 - 集射极击穿(最大值) - 500V - 500V 500V 500V
不同 Ib,Ic 时的 Vce 饱和值(最大值) - 1V @ 600mA,3A - 1V @ 600mA,3A 1V @ 600mA,3A 1V @ 600mA,3A
电流 - 集电极截止(最大值) - 10µA(ICBO) - 10µA(ICBO) 10µA(ICBO) 10µA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值) - 30 @ 600mA,5V - 15 @ 600mA,5V 15 @ 600mA,5V 15 @ 600mA,5V
功率 - 最大值 - 40W - 40W 40W 40W
频率 - 跃迁 - 15MHz - 15MHz 15MHz 15MHz
工作温度 - 150°C(TJ) - 150°C(TJ) 150°C(TJ) 150°C(TJ)
安装类型 - 通孔 - 通孔 通孔 通孔
封装/外壳 - TO-220-3 整包 - TO-220-3 整包 TO-220-3 整包 TO-220-3 整包
供应商器件封装 - TO-220F - TO-220F TO-220F TO-220F
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