9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
9 A, 900 V, 1.4 ohm, N沟道, 硅, POWER, 场效应管
厂商名称:Fairchild
厂商官网:http://www.fairchildsemi.com/
器件标准:
下载文档型号 | FQA9N90C | FQA9N90C_07 | FQA9N90C_F109 |
---|---|---|---|
描述 | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
端子形式 | THROUGH-HOLE | THROUGH-孔 | THROUGH-HOLE |
端子位置 | SINGLE | 单一的 | SINGLE |
晶体管应用 | SWITCHING | 开关 | SWITCHING |
晶体管元件材料 | SILICON | 硅 | SILICON |
是否Rohs认证 | 符合 | - | 符合 |
厂商名称 | Fairchild | - | Fairchild |
零件包装代码 | TO-3P | - | TO-3PN |
包装说明 | TO-3P, 3 PIN | - | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 | - | 3 |
Reach Compliance Code | unknow | - | compli |
ECCN代码 | EAR99 | - | EAR99 |
雪崩能效等级(Eas) | 900 mJ | - | 900 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 900 V | - | 900 V |
最大漏极电流 (Abs) (ID) | 9 A | - | 9 A |
最大漏极电流 (ID) | 9 A | - | 9 A |
最大漏源导通电阻 | 1.4 Ω | - | 1.4 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSFM-T3 | - | R-PSFM-T3 |
JESD-609代码 | e3 | - | e3 |
工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
最高工作温度 | 150 °C | - | 150 °C |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | - | RECTANGULAR |
封装形式 | FLANGE MOUNT | - | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT APPLICABLE | - | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | - | N-CHANNEL |
最大功率耗散 (Abs) | 280 W | - | 280 W |
最大脉冲漏极电流 (IDM) | 36 A | - | 36 A |
认证状态 | Not Qualified | - | Not Qualified |
表面贴装 | NO | - | NO |
端子面层 | Matte Tin (Sn) | - | Matte Tin (Sn) |
处于峰值回流温度下的最长时间 | NOT APPLICABLE | - | NOT SPECIFIED |