型号
- 型号
- 关键词
| 型号 | RMP4N60LD-T | RMP4N60T2 | RMP4N60TI | RMP4N60IP |
|---|---|---|---|---|
| 描述 | MOSFET D-PAK MOSFET | MOSFET TO-220 MOSFET | MOSFET TO-220F MOSFET | MOSFET TO-251 MOSFET |
| 厂商名称 | Rectron | Rectron | Rectron | Rectron |
| 产品种类 | MOSFET | MOSFET | MOSFET | MOSFET |
| 技术 | Si | Si | Si | Si |
| 安装风格 | SMD/SMT | Through Hole | Through Hole | Through Hole |
| 封装 / 箱体 | TO-252-3 | TO-220-3 | TO-220F-3 | TO-251-3 |
| 通道数量 | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| 晶体管极性 | N-Channel | N-Channel | N-Channel | N-Channel |
| Vds-漏源极击穿电压 | 600 V | 600 V | 600 V | 600 V |
| Id-连续漏极电流 | 4 A | 4 A | 4 A | 4 A |
| Rds On-漏源导通电阻 | 2.5 Ohms | 2.5 Ohms | 2.5 Ohms | 2.5 Ohms |
| Vgs th-栅源极阈值电压 | 2 V | 2 V | 2 V | 2 V |
| Vgs - 栅极-源极电压 | 30 V | 30 V | 30 V | 30 V |
| Qg-栅极电荷 | 20 nC | 20 nC | 20 nC | 20 nC |
| 最小工作温度 | - 55 C | - 55 C | - 55 C | - 55 C |
| 最大工作温度 | + 150 C | + 150 C | + 150 C | + 150 C |
| Pd-功率耗散 | 51 W | 100 W | 33 W | 51 W |
| 配置 | Single | Single | Single | Single |
| 通道模式 | Enhancement | Enhancement | Enhancement | Enhancement |
| 封装 | Reel | Tube | Tube | Tube |
| 晶体管类型 | 1 N-Channel | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| 正向跨导 - 最小值 | 4 S | 4 S | 4 S | 4 S |
| 下降时间 | 38 ns | 38 ns | 38 ns | 38 ns |
| 上升时间 | 48 ns | 48 ns | 48 ns | 48 ns |
| 工厂包装数量 | 2500 | 1000 | 1000 | 800 |
| 典型关闭延迟时间 | 48 ns | 48 ns | 48 ns | 48 ns |
| 典型接通延迟时间 | 16 ns | 16 ns | 16 ns | 16 ns |
