Infineon(英飞凌)

MOSFET N-Ch 200V 9.5A TO220-3

ST(意法半导体)

11A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

Thomson Consumer Electronics

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Harris

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

SIEMENS

POWER, FET

Intersil ( Renesas )

POWER, FET

Rochester Electronics

9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Renesas(瑞萨电子)

9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

TT Electronics plc

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SEMELAB

9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET

Rochester Electronics

15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA

SIEMENS

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon(英飞凌)

SIPMOS Power Transistor

ISC

isc N-Channel MOSFET Transistor

Rochester Electronics

12.5A, 400V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218

Infineon(英飞凌)

SIPMOS Power Transistor

SIEMENS

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

ISC

Easy driver for cost effective application

Infineon(英飞凌)

Power Field-Effect Transistor, 10.5A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218

SIEMENS

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

North American Philips Discrete Products Div

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

ST(意法半导体)

9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET

Infineon(英飞凌)

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN

SIEMENS

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN

Infineon(英飞凌)

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

SIEMENS

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

Infineon(英飞凌)

mosfet N-CH 200v 9.5A d2pak

Infineon(英飞凌)

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

SIEMENS

Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

Infineon(英飞凌)

MOSFET N-Ch 200V 9.5A TO220-3