UNISONIC TECHNOLOGIES CO.,LTD
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MODE
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MODE
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MODE
友顺(UTC)
漏源电压（Vdss）：30V 连续漏极电流（Id）（25°C 时）：4.2A 栅源极阈值电压：1.3V @ 250uA 漏源导通电阻：50mΩ @ 4.2A,10V 最大功率耗散（Ta=25°C）：1.4W 类型：P沟道 P沟道
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MODE
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MODE
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
Transistor
友顺(UTC)
漏源电压（Vdss）：30V 连续漏极电流（Id）（25°C 时）：4.2A 栅源极阈值电压：1.3V @ 250uA 漏源导通电阻：50mΩ @ 4.2A,10V 最大功率耗散（Ta=25°C）：1.4W 类型：P沟道
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MODE
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL ENHANCEMENT MODE
UNISONIC TECHNOLOGIES CO.,LTD
Power MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
-2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
Power MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
-2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
-2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
-2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
-2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
N-CHANNEL ENHANCEMENT MODE MOSFET
台湾微碧(VBsemi)
N-Channel 30-V (D-S) MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
友顺(UTC)
漏源电压（Vdss）：30V 连续漏极电流（Id）（25°C 时）：5.8A 栅源极阈值电压：3V @ 250uA 漏源导通电阻：28mΩ @ 5.8A,10V 最大功率耗散（Ta=25°C）：1.4W 类型：N沟道 N沟 30V 5.8A
UNISONIC TECHNOLOGIES CO.,LTD
N-CHANNEL ENHANCEMENT MODE MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
Power Field-Effect Transistor
UNISONIC TECHNOLOGIES CO.,LTD
N-CHANNEL ENHANCEMENT MODE MOSFET
