Microsemi
Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology
Calogic
Power Field-Effect Transistor, 60V, 7.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Exar
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Calogic
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-4
SIPEX
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Exar
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SIPEX
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Calogic
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Calogic
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Calogic
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay(威世)
MOSFET QD 60V 0.225A
Exar
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Calogic
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, DIP-14
TelCom Semiconductor, Inc. (Microchip Technology)
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
TEMIC
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
SIPEX
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Vishay(威世)
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay(威世)
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Supertex
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14
Supertex
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, DIP-14
TEMIC
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Atmel (Microchip)
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Vishay(威世)
——
Vishay(威世)
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Vishay(威世)
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Vishay(威世)
MOSFET N-CH 60V 0.225A
Vishay(威世)
MOSFET QD 30V 0.83A
TEMIC
Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Vishay(威世)
Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Vishay(威世)
Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
