International Rectifier （ Infineon ）
Power Field-Effect Transistor, 56A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Thomson Consumer Electronics
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 50A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
International Rectifier （ Infineon ）
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
Vishay(威世)
MOSFET N-Chan 60V 57 Amp
Thomson Consumer Electronics
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Infineon(英飞凌)
MOSFET N-CH 55V 53A TO-247AC
International Rectifier （ Infineon ）
Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A)
ISC
N-Channel MOSFET Transistor
Infineon(英飞凌)
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon(英飞凌)
53A, 55V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon(英飞凌)
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon(英飞凌)
53A, 55V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET
Infineon(英飞凌)
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon(英飞凌)
53A, 55V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon(英飞凌)
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon(英飞凌)
53A, 55V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon(英飞凌)
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Infineon(英飞凌)
53A, 55V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon(英飞凌)
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
