BSZ039N06NS
MOSFET
OptiMOS
TM
Power-Transistor,60V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.Rec
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
TSDSON-8FL
(enlarged source interconnection)
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
S1
S2
S3
G4
8D
7D
6D
5D
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..10V)
Value
60
3.9
102
32
27
Unit
V
mΩ
A
nC
nC
Type/OrderingCode
BSZ039N06NS
Package
PG-TSDSON-8 FL
Marking
039N06N
RelatedLinks
-
Final Data Sheet
1
Rev.2.1,2020-11-30
OptiMOS
TM
Power-Transistor,60V
BSZ039N06NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.1,2020-11-30
OptiMOS
TM
Power-Transistor,60V
BSZ039N06NS
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-20
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
Max.
102
65
18
408
130
20
69
2.1
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
A
=25°C,
R
THJA
=60°C/W
2)
T
A
=25°C
I
D
=20A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
THJA
=60°C/W
2)
IEC climatic category; DIN IEC 68-1:
55/150/56
Continuous drain current
1)
Pulsed drain current
3)
Avalanche energy, single pulse
4)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm² cooling area
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
1.1
-
-
Max.
1.8
20
60
Unit
Note/TestCondition
°C/W -
°C/W -
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2020-11-30
OptiMOS
TM
Power-Transistor,60V
BSZ039N06NS
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
60
2.1
-
-
-
-
-
-
27
Typ.
-
2.8
0.5
10
10
3.2
4.6
1.6
55
Max.
-
3.3
1
100
100
3.9
6.0
2.4
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=36µA
V
DS
=60V,V
GS
=0V,T
j
=25°C
V
DS
=60V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=20A
V
GS
=6V,I
D
=5A
-
|V
DS
|≥2|I
D
|R
DS(on)max
,I
D
=20A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
2000
490
22
10
7
19
6
Max.
2500
620
44
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=30V,f=1MHz
V
GS
=0V,V
DS
=30V,f=1MHz
V
GS
=0V,V
DS
=30V,f=1MHz
V
DD
=30V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=30V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=30V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=30V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Gate charge total, sync. FET
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
Typ.
8.5
5.5
4.9
8.0
27
4.4
24
32
Max.
-
-
7.4
-
34
-
-
40
Unit
nC
nC
nC
nC
nC
V
nC
nC
Note/TestCondition
V
DD
=30V,I
D
=20A,V
GS
=0to10V
V
DD
=30V,I
D
=20A,V
GS
=0to10V
V
DD
=30V,I
D
=20A,V
GS
=0to10V
V
DD
=30V,I
D
=20A,V
GS
=0to10V
V
DD
=30V,I
D
=20A,V
GS
=0to10V
V
DD
=30V,I
D
=20A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to10V
V
DD
=30V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definition.
Final Data Sheet
4
Rev.2.1,2020-11-30
OptiMOS
TM
Power-Transistor,60V
BSZ039N06NS
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.84
33
33
Max.
69
408
1
-
-
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=20A,T
j
=25°C
V
R
=30V,I
F
=20A,di
F
/dt=100A/µs
V
R
=30V,I
F
=20A,di
F
/dt=100A/µs
Final Data Sheet
5
Rev.2.1,2020-11-30
