SH8MA2
30V Nch+Pch Power MOSFET
Datasheet
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Outline
Symbol
V
DSS
R
DS(on)
(Max.)
I
D
P
D
Tr1:Nch Tr2:Pch
30V
80mΩ
±4.5A
-30V
82mΩ
±4.5A
SOP8
2.7W
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Features
1) Low on - resistance
2) Small Surface Mount Package (SOP8)
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
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Inner circuit
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Packaging specifications
Packing
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Application
Switching
Type
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Value
Tr1:Nch Tr2:Pch
30
-30
±4.5
±4.5
±12
±12
±20
±20
4.0
-4.0
1.1
1.4
2.7
2.0
1.4
150
-55 to +150
Embossed
Tape
330
12
2500
TB
SH8MA2
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation (total)
Symbol
V
DSS
I
D*1
I
DP*2
V
GSS
I
AS*3
E
AS*3
P
D*1
P
D*4
P
D*5
T
j
T
stg
1/19
Unit
V
A
A
V
A
mJ
W
℃
℃
Junction temperature
Operating junction and storage temperature range
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© 2017 ROHM Co., Ltd. All rights reserved.
20170511 - Rev.001
SH8MA2
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient (total)
Symbol
R
thJA*4
R
thJA*5
Values
Min.
-
-
Typ.
-
-
Max.
62.5
89.2
Unit
℃
/W
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Symbol Type
V
(BR)DSS
Conditions
Values
Min.
30
-30
-
-
-
-
-
-
1.0
-1.0
-
-
-
-
-
-
-
-
1.7
2.0
Typ.
-
-
21
-22
-
-
-
-
-
-
-3
2.9
57
88
63
89
3.5
13
-
-
Max.
-
-
-
-
1
-1
±100
±100
2.5
-2.5
-
-
80
125
82
115
-
-
-
-
Unit
V
mV/
℃
μA
nA
V
mV/
℃
Tr1 V
GS
= 0V, I
D
= 1mA
Tr2 V
GS
= 0V, I
D
= -1mA
I
D
= 1mA, referenced to 25
℃
I
D
= -1mA, referenced to 25
℃
Δ
V
(BR)DSS
Tr1
ΔT
j
Tr2
I
DSS
I
GSS
V
GS(th)
Tr1 V
DS
= 30V, V
GS
= 0V
Tr2 V
DS
= -30V, V
GS
= 0V
Tr1 V
DS
= 0V, V
GS
= ±20V
Tr2 V
DS
= 0V, V
GS
= ±20V
Tr1 V
DS
= V
GS
, I
D
= 1mA
Tr2 V
DS
= V
GS
, I
D
= -1mA
I
D
= 1mA, referenced to 25
℃
I
D
= -1mA, referenced to 25
℃
Δ
V
GS(th)
Tr1
ΔT
j
Tr2
Tr1
Static drain - source
on - state resistance
R
DS(on)*6
Tr2
Gate resistance
Forward Transfer
Admittance
R
G
|Y
fs
|
*6
Tr1
Tr2
V
GS
= 10V, I
D
= 4.5A
V
GS
= 4.5V, I
D
= 4.0A
V
GS
= -10V, I
D
= -4.5A
V
GS
= -4.5V, I
D
= -4.0A
f=1MHz, open drain
mΩ
Ω
S
Tr1 V
DS
= 5.0V, I
D
= 4.0A
Tr2 V
DS
= -5.0V, I
D
= -4.0A
*1 Pw
≦
1s, Mounted on a ceramic board (30×30×0.8mm), Limited only by maximum temperature allowed.
*2 Pw
≦
10μs, Duty cycle
≦
1%
*3 Tr1:L
⋍
0.1mH, V
DD
= 15V, R
G
= 25Ω, Starting T
j
= 25
℃
Fig.1-1,1-2
Tr2: L
⋍
0.1mH, V
DD
= -15V, R
G
= 25Ω, Starting T
j
= 25
℃
Fig.3-1,3-2
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a FR4 (25×25×0.8mm)
*6 Pulsed
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© 2017 ROHM Co., Ltd. All rights reserved.
2/19
20170511 - Rev.001
SH8MA2
Datasheet
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Electrical characteristics
(T
a
= 25°C)
<Tr1>
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
<Tr2>
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*5
t
r*5
t
d(off)*5
t
f*5
Conditions
Min.
V
GS
= 0V
V
DS
= 15V
f = 1MHz
V
DD
⋍
15V, V
GS
= 10V
Values
Typ.
125
20
15
5.0
7.5
10
3.5
Max.
-
-
-
-
-
Unit
-
-
-
-
-
-
-
pF
I
D
= 2.25A
R
L
= 6.67Ω
R
G
= 10Ω
ns
-
-
Symbol
C
iss
C
oss
C
rss
t
d(on)*5
t
r*5
t
d(off)*5
t
f*5
Conditions
Min.
V
GS
= 0V
V
DS
= -15V
f = 1MHz
V
DD
⋍
-15V, V
GS
= -10V
Values
Typ.
305
55
43
7.2
8.0
28.0
8.5
Max.
-
-
-
-
-
Unit
-
-
-
-
-
-
-
pF
I
D
= -2.25A
R
L
= 6.67Ω
R
G
= 10Ω
ns
-
-
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© 2017 ROHM Co., Ltd. All rights reserved.
3/19
20170511 - Rev.001
SH8MA2
Datasheet
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Gate charge characteristics
(T
a
= 25°C)
<Tr1>
Parameter
Symbol
Q
g*6
Q
gs*6
Q
gd*6
V
DD
⋍
15V
I
D
= 4.5A
Conditions
V
GS
= 10V
Values
Min.
-
-
Typ.
3.0
1.5
0.6
0.5
Values
Min.
-
-
-
-
Typ.
6.7
3.4
1.1
1.3
Max.
-
-
Max.
-
-
Unit
Total gate charge
Gate - Source charge
Gate - Drain charge
<Tr2>
Parameter
nC
V
GS
= 4.5V
-
-
-
-
Symbol
Q
g*6
Q
gs
*6
Conditions
V
GS
= -10V
Unit
Total gate charge
Gate - Source charge
Gate - Drain charge
V
DD
⋍
-15V
I
D
= -4.5A
V
GS
= -4.5V
nC
-
-
Q
gd*6
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
<Tr1>
Parameter
Continuous forward current
Pulse forward current
Forward voltage
<Tr2>
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*2
V
SD*6
Conditions
T
a
= 25
℃
V
GS
= 0V, I
S
= -1.67A
Values
Min.
-
-
-
Typ.
-
-
-
Max.
-1.67
A
-12
-1.2
V
Unit
Symbol
I
S
I
SP*2
V
SD*6
Conditions
T
a
= 25
℃
V
GS
= 0V, I
S
= 1.67A
Values
Min.
-
-
-
Typ.
-
-
-
Max.
1.67
A
12
1.2
V
Unit
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© 2017 ROHM Co., Ltd. All rights reserved.
4/19
20170511 - Rev.001
SH8MA2
Datasheet
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Electrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2017 ROHM Co., Ltd. All rights reserved.
5/19
20170511 - Rev.001
