Photovoltaic MOSFET driver high power type
MOSFET drivers for high-speed operation and low on-resistance
FEATURES
Miniature SSOP package
High-speed MOSFET operation
(high output current: APV1111GVY)
Low on-resistance of MOSFET
(high output voltage: APV3111GVY)
2.65
4.45
1.8
1
Control circuit
+
TYPICAL APPLICATIONS
4
2
½
3
Driving MOSFET
Measuring equipment, Testing equipment,
Industrial machinery, Industrial equipment,
Data center, FA power supply
Note: Please contact our sales representative for automotive applications of PhotoMOS.
(Unit: mm)
TYPES
Output rating
Package
Drop-out voltage
(Typ. )
8.5 V
18 V
Short circuit current
(Typ. )
45
μA
12
μA
Part No.
Surface-mount terminal
Tape and reel packing style *
APV1111GVY
APV3111GVY
Packing quantity
tape and reel
1-reel: 3,500 pcs.
Outer carton: 3,500 pcs.
SSOP
* Tape and reel package is the standard packing style. Packing quantity of 1,000 pieces is possible. Please contact our sales representative.
For space reasons, the two initial letters of the part number “AP”, package (SSOP) indicator “V” and the packing style are not marked on the device.
(Ex. the label for product number APV1111GVY is V1111G)
Tape and reel packing style picked from the 1/4-pin side.Tape and reel packing picked from 2/3-pin side is also available. Please contact our sales representative.
RATING
Absolute maximum ratings (Ambient temperature: 25°C)
Item
LED forward current
Input
LED reverse voltage
Peak forward current
Power dissipation
I/O isolation voltage
Ambient temperature (Operating)
Ambient temperature (Storage)
Symbol
I
F
V
R
I
FP
P
in
V
iso
T
opr
T
stg
APV1111GVY
30
mA
5V
1
A
60 mW
1,500 Vrms
−40
to
+85°C
−40
to
+100°C
(Avoid icing and condensation)
f = 100 Hz
Duty Ratio = 0.1%
APV3111GVY
Remarks
2021.04
industrial.panasonic.com/ac/e/
ー1ー
Panasonic Corporation 2021
ASCTB437E 202104
Photovoltaic MOSFET driver high power type
Electrical characteristics (Ambient temperature: 25°C)
Item
Input
LED dropout voltage
Typical
Maximum
Typical
Drop-out voltage
Output
Minimum
Typical
Typical
Short circuit current
Turn on time*
Turn off time*
I/O capacitance
Initial I/O isolation resistance
*Turn on/Turn off time measurement circuit
I
F
=10mA 1
2
C
L
=1000pF
4
3
C
L
V
OUT
Symbol
V
F
APV1111GVY
1.47 V
1.7 V
8.5 V
APV3111GVY
Condition
I
F
= 10
mA
16.5 V
15 V
18 V
7
µA
5
µA
12
µA
0.4 ms
0.04 ms
0.8 pF
1.5 pF
1,000
MΩ
I
F
= 5
mA
I
F
= 10
mA
I
F
= 5
mA
I
F
= 10
mA
I
F
= 10
mA
C
L
= 1,000 pF
I
F
= 10
mA
C
L
= 1,000 pF
V
B
= 0 V
f = 1 MHz
500 V DC
V
oc
6V
8.5 V
25
µA
Minimum
Typical
Typical
Typical
Typical
Maximum
Minimum
I
sc
T
on
T
off
C
iso
R
iso
25
µA
45
µA
0.1 ms
0.1 ms
* Turn on/Turn off time
Transfer
characteristics
Input
5V
Output
1V
Ton
Toff
Recommended operating conditions (Ambient temperature: 25°C)
Item
LED forward current
Symbol
I
F
Min.
5
Max.
20
Please use under recommended operating conditions to obtain expected characteristics.
Unit
mA
Panasonic Corporation Electromechanical Control Business Division
industrial.panasonic.com/ac/e/
ー2ー
Panasonic Corporation 2021
ASCTB437E 202104
Photovoltaic MOSFET driver high power type
REFERENCE DATA
1-1. Drop-out voltage vs. ambient
temperature characteristics
LED forward current: 10 mA;
Part No. : APV1111GVY
14
1-2. Drop-out voltage vs. ambient
temperature characteristics
LED forward current: 10 mA;
Part No. : APV3111GVY
27
2-1. Short circuit current vs. ambient
temperature characteristics
LED forward current: 10 mA;
Part No. : APV1111GVY
75
10
21
Short circuit current (μA)
Drop-out voltage (V)
Drop-out voltage (V)
12
24
60
45
8
18
30
6
15
15
4
-40
-20
Ambient temperature (°C)
0
20
40
60
8085
12
-40
-20
0
20
40
60
8085
0
-40
-20
0
20
40
60
8085
Ambient temperature (°C)
Ambient temperature (°C)
2-2. Short circuit current vs. ambient
temperature characteristics
LED forward current: 10 mA;
Part No. : APV3111GVY
25
3. LED dropout voltage vs. ambient
temperature characteristics
LED forward current: 5 to 30 mA
2.0
4. Turn on time vs. ambient temperature
characteristics
LED forward current: 10 mA;
Load capacity: 1,000 pF;
Output voltage: 5 V
0.75
Short circuit current (μA)
LED dropout voltage (V)
20
1.8
Turn on time (ms)
0.60
APV3111GVY
0.45
15
1.6
10
1.4
30mA
20mA
10mA
5mA
0.30
5
1.2
0.15
APV1111GVY
0
-40
-20
0
20
40
60
8085
1.0
-40
-20
0
20
40
60
8085
0
-40
-20
0
20
40
60
8085
Ambient temperature (°C)
Ambient temperature (°C)
Ambient temperature (°C)
5. Turn off time vs. ambient temperature
characteristics
LED forward current: 10 mA;
Load capacity: 1,000 pF;
Output voltage: 1 V
0.5
6. Turn on time vs. LED forward current
characteristics
Load capacity: 1,000 pF;
Output voltage: 5 V;
Ambient temperature: 25
℃
3.0
2.5
Turn on time (ms)
7. Turn off time vs. LED forward current
characteristics
Load capacity: 1,000 pF;
Output voltage: 1 V;
Ambient temperature: 25
℃
0.5
0.4
Turn off time (ms)
0.4
Turn off time (ms)
2.0
1.5
1.0
0.3
0.3
0.2
APV1111GVY
0.1
APV3111GVY
-40
-20
0
20
40
60
80 85
Ambient temperature (°C)
0.2
APV1111GVY
0.1
APV3111GVY
0
5
10
15
20
25
30
APV3111GVY
0.5 APV1111GVY
0
0
0
5
10
15
20
25
30
0
LED forward current (mA)
LED forward current (mA)
Panasonic Corporation Electromechanical Control Business Division
industrial.panasonic.com/ac/e/
ー3ー
Panasonic Corporation 2021
ASCTB437E 202104
Photovoltaic MOSFET driver high power type
8. Turn on time vs. load capacitance
characteristics
LED forward current: 10 mA;
Load capacitance: 100 pF to 10,000 pF;
Output voltage: 5 V; Ambient temperature: 25
℃
10.00
9. Turn off time vs. load capacitance
characteristics
LED forward current: 10 mA;
Load capacitance: 100 pF to 10,000 pF;
Output voitage: 1V; Ambient temperature: 25
℃
10.00
10. Drop-out voltage vs. LED forward
current characteristics
Ambient temperature: 25
℃
25
1.00
APV3111GVY
1.00
Drop-out voltage (V)
20
Turn on time (ms)
Turn off time (ms)
APV3111GVY
15
0.10
APV1111GVY
0.10
APV1111GVY
10
APV1111GVY
5
APV3111GVY
0.01
100
1,000
Load capacitanse (pF)
10,000
0.01
100
1,000
Load capacitanse (pF)
10,000
0
0
5
10
15
20
25
30
LED forward current (mA)
11. Short circuit current vs. LED forward
current characteristics
Ambient temperature: 25
℃
1,000
Short circuit current (μA)
100
APV1111GVY
10
APV3111GVY
1
1
10
LED forward current (mA)
100
DIMENSIONS
CAD
The CAD data of the products with a “CAD” mark can be downloaded from our Website.
Unit: mm
SSOP
CAD
External dimensions
4.45
2.65
Recommended mounting pad
(TOP VIEW)
0.7
0.9
1.27
4.35
1.8
0.2
（
4.85
）
0.2
0.4
1.27
0.4
Tolerance: ±0.1
Terminal thickness: t = 0.15
General tolerance: ±0.1
SCHEMATIC AND WIRING DIAGRAMS
Schematic
Output
configuration
＋
Control circuit
Load
type
Connection
Wiring diagram
1
4
I
F
1
2
4
3
Load
1
Form A
－
-
-
E
1
External
MOSFET
4
V
L
(AC, DC)
3
＋
Load
External
MOSFET
V
L
(DC)
－
2
3
Please refer to
"the latest product specifications"
when designing your product.
•Requests to customers:
https://industrial.panasonic.com/ac/e/salespolicies/
Panasonic Corporation Electromechanical Control Business Division
industrial.panasonic.com/ac/e/
ー4ー
Panasonic Corporation 2021
ASCTB437E 202104
PhotoMOS
®
Cautions for Use
SAFETY WARNINGS
Do not use the product under conditions that exceed the range
of its specifications. It may cause overheating, smoke, or fire.
Do not touch the recharging unit while the power is on. There
is a danger of electrical shock. Be sure to turn off the power
when performing mounting, maintenance, or repair operations
on the device (including connecting parts such as the terminal
board and socket).
Check the wiring diagrams in the catalog and be sure to
connect the terminals correctly. If the device is energized
with short circuit or any wrong connection, it may cause
unexpected malfunction, abnormal heat or fire.
PhotoMOS
®
Cautions for Use
Derating design
Derating is a significant factor for reliable design and product life.
Even if the conditions of use (temperature, current, voltage, etc.) of
the product are within the absolute maximum ratings, reliability may
be lowered remarkably when continuously used in high load
conditions (high temperature, high humidity, high current, high
voltage, etc.) Therefore, please derate sufficiently below the
absolute maximum ratings and evaluate the device in the actual
condition.
Moreover, regardless of the application, if malfunctioning can be
expected to pose high risk to human life or to property, or if products
are used in equipment otherwise requiring high operational safety, in
addition to designing double circuits, that is, incorporating features
such as a protection circuit or a redundant circuit, safety testing
should also be carried out.
5) When packing printed circuit boards and equipment, avoid using
high-polymer materials such as foam styrene, plastic, and other
materials which carry an electrostatic charge.
6) When storing or transporting PhotoMOS
®
, the environment should
not be conducive to generating static electricity (for instance, the
humidity should be between 45% and 60%), and PhotoMOS
®
should be protected using conductive packing materials.
Unused terminals
The No. 3 terminal is used with the circuit inside the device.
Therefore, do not connect it to the external circuitry with either
connection method A, B or C. (1 Form A 6-pin type)
Short across terminals
Applying stress that exceeds the absolute maximum
rating
Do not short circuit between terminals when device is energized,
since there is possibility of breaking of the internal IC.
If the voltage or current value for any of the terminals exceeds the
absolute maximum rating, internal elements will deteriorate because
of the overvoltage or overcurrent. In extreme cases, wiring may
melt, or silicon P/N junctions may be destroyed.
Therefore, the circuit should be designed in such a way that the load
never exceed the absolute maximum ratings, even momentarily.
Surge voltages at the input
If reverse surge voltages are present at the input terminals, connect
a diode in reverse parallel across the input terminals and keep the
reverse voltages below the reverse breakdown voltage.
Typical circuits are below shown.
1) 6-pin
Input voltage (for Voltage-sensitive type)
For rising and dropping ratio of input voltage(dv/dt), maintain Min.
100mV/ms.
1
2
3
6
5
4
Oscillation circuit and control circuit (for TSON)
The oscillation circuit and control circuit of product may be destroyed
by external noise, surge, static electricity and so on.
For noise effect to peripheral circuits when oscillation circuit
operates, please implement safety measures on the system before
use by verifying operation under the actual design.
2) Power type
This phenomenon is generally called static electricity destruction,
and occurs when static electricity generated by various factors is
discharged while the PhotoMOS
®
terminals are in contact, producing
internal destruction of the element.
To prevent problems from static electricity, the following precautions
and measures should be taken when using your device.
1) Employees handling PhotoMOS
®
should wear anti-static clothing
and should be grounded through protective resistance of 500kΩ
to 1MΩ.
2) A conductive metal sheet should be placed over the worktable.
Measuring instruments and jigs should be grounded.
3) When using soldering irons, either use irons with low leakage
current, or ground the tip of the soldering iron. (Use of low-voltage
soldering irons is also recommended.)
4) Devices and equipment used in assembly should also be
grounded.
Panasonic Corporation Electromechanical Control Business Division
industrial.panasonic.com/ac/e/
Deterioration and destruction caused by discharge of
static electricity (for TSON/RF C×R3/RF C×R5/RF
C×R10)
3
4
1
2
ー5ー
Panasonic Corporation 2020
ASCTB65E 202002
