型号 | CD54HC30F | 5962-8974601CA | 8404001CA | CD54HC30F3A | CD54HCT30F3A | CD54HC30 | CD54HCT30 | CD74HC30 | CD74HCT30 |
---|---|---|---|---|---|---|---|---|---|
描述 | High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 | High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 | High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 | High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 | High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 | CD54HC30 High Speed CMOS Logic 8-Input NAND Gate | CD54HCT30 High Speed CMOS Logic 8-Input NAND Gate | CD74HC30 High Speed CMOS Logic 8-Input NAND Gate | CD74HCT30 High Speed CMOS Logic 8-Input NAND Gate |
Brand Name | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | - | - | - | - |
零件包装代码 | DIP | DIP | DIP | DIP | DIP | - | - | - | - |
包装说明 | DIP, DIP14,.3 | DIP, DIP14,.3 | DIP, DIP14,.3 | DIP, DIP14,.3 | DIP-14 | - | - | - | - |
针数 | 14 | 14 | 14 | 14 | 14 | - | - | - | - |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | - | - | - | - |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | - | - | - |
Factory Lead Time | 6 weeks | 1 week | 16 weeks | 16 weeks | 6 weeks | - | - | - | - |
系列 | HC/UH | HCT | HC | HC/UH | HCT | - | - | - | - |
JESD-30 代码 | R-GDIP-T14 | R-GDIP-T14 | R-GDIP-T14 | R-GDIP-T14 | R-GDIP-T14 | - | - | - | - |
长度 | 19.56 mm | 19.56 mm | 19.56 mm | 19.56 mm | 19.56 mm | - | - | - | - |
负载电容(CL) | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | - | - | - | - |
逻辑集成电路类型 | NAND GATE | NAND GATE | NAND GATE | NAND GATE | NAND GATE | - | - | - | - |
最大I(ol) | 0.004 A | 0.004 A | 0.004 A | 0.004 A | 0.004 A | - | - | - | - |
功能数量 | 1 | 1 | 1 | 1 | 1 | - | - | - | - |
输入次数 | 8 | 8 | 8 | 8 | 8 | - | - | - | - |
端子数量 | 14 | 14 | 14 | 14 | 14 | - | - | - | - |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | - | - | - | - |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - | - | - | - |
封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | - | - | - | - |
封装代码 | DIP | DIP | DIP | DIP | DIP | - | - | - | - |
封装等效代码 | DIP14,.3 | DIP14,.3 | DIP14,.3 | DIP14,.3 | DIP14,.3 | - | - | - | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - | - | - |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | - | - | - | - |
包装方法 | TUBE | TUBE | TUBE | TUBE | TUBE | - | - | - | - |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | - | - |
电源 | 2/6 V | 5 V | 2/6 V | 2/6 V | 5 V | - | - | - | - |
最大电源电流(ICC) | 0.04 mA | 0.04 mA | 0.04 mA | 0.04 mA | 0.04 mA | - | - | - | - |
Prop。Delay @ Nom-Sup | 39 ns | 42 ns | 30 ns | 39 ns | 42 ns | - | - | - | - |
传播延迟(tpd) | 195 ns | 42 ns | 195 ns | 195 ns | 42 ns | - | - | - | - |
认证状态 | Not Qualified | Qualified | Qualified | Not Qualified | Not Qualified | - | - | - | - |
施密特触发器 | NO | NO | NO | NO | NO | - | - | - | - |
座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | - | - | - | - |
最大供电电压 (Vsup) | 6 V | 5.5 V | 6 V | 6 V | 5.5 V | - | - | - | - |
最小供电电压 (Vsup) | 2 V | 4.5 V | 2 V | 2 V | 4.5 V | - | - | - | - |
标称供电电压 (Vsup) | 4.5 V | 5 V | 4.5 V | 4.5 V | 5 V | - | - | - | - |
表面贴装 | NO | NO | NO | NO | NO | - | - | - | - |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | - | - | - | - |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | - | - | - | - |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | - | - | - |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | - | - | - | - |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | - | - | - | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | - | - |
宽度 | 7.62 mm | 6.67 mm | 7.62 mm | 7.62 mm | 6.67 mm | - | - | - | - |