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CD54HCT30

CD54HCT30 High Speed CMOS Logic 8-Input NAND Gate

器件类别:半导体    逻辑   

厂商名称:Texas Instruments(德州仪器)

厂商官网:http://www.ti.com.cn/

敬请期待
器件参数
参数名称
属性值
Input type
Bipolar
IOL(Max)(mA)
4
Rating
Military
Output type
Push-Pull
IOH(Max)(mA)
-4
Operating temperature range(C)
-55 to 125
VCC(Max)(V)
5.5
Technology Family
HCT
VCC(Min)(V)
4.5
Package Group
CDIP|14
参数对比
与CD54HCT30相近的元器件有:5962-8974601CA、8404001CA、CD54HC30F、CD54HC30F3A、CD54HCT30F3A、CD54HC30、CD74HC30、CD74HCT30。描述及对比如下:
型号 CD54HCT30 5962-8974601CA 8404001CA CD54HC30F CD54HC30F3A CD54HCT30F3A CD54HC30 CD74HC30 CD74HCT30
描述 CD54HCT30 High Speed CMOS Logic 8-Input NAND Gate High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125 CD54HC30 High Speed CMOS Logic 8-Input NAND Gate CD74HC30 High Speed CMOS Logic 8-Input NAND Gate CD74HCT30 High Speed CMOS Logic 8-Input NAND Gate
Brand Name - Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments - - -
零件包装代码 - DIP DIP DIP DIP DIP - - -
包装说明 - DIP, DIP14,.3 DIP, DIP14,.3 DIP, DIP14,.3 DIP, DIP14,.3 DIP-14 - - -
针数 - 14 14 14 14 14 - - -
Reach Compliance Code - not_compliant not_compliant not_compliant not_compliant not_compliant - - -
ECCN代码 - EAR99 EAR99 EAR99 EAR99 EAR99 - - -
Factory Lead Time - 1 week 16 weeks 6 weeks 16 weeks 6 weeks - - -
系列 - HCT HC HC/UH HC/UH HCT - - -
JESD-30 代码 - R-GDIP-T14 R-GDIP-T14 R-GDIP-T14 R-GDIP-T14 R-GDIP-T14 - - -
长度 - 19.56 mm 19.56 mm 19.56 mm 19.56 mm 19.56 mm - - -
负载电容(CL) - 50 pF 50 pF 50 pF 50 pF 50 pF - - -
逻辑集成电路类型 - NAND GATE NAND GATE NAND GATE NAND GATE NAND GATE - - -
最大I(ol) - 0.004 A 0.004 A 0.004 A 0.004 A 0.004 A - - -
功能数量 - 1 1 1 1 1 - - -
输入次数 - 8 8 8 8 8 - - -
端子数量 - 14 14 14 14 14 - - -
最高工作温度 - 125 °C 125 °C 125 °C 125 °C 125 °C - - -
最低工作温度 - -55 °C -55 °C -55 °C -55 °C -55 °C - - -
封装主体材料 - CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED - - -
封装代码 - DIP DIP DIP DIP DIP - - -
封装等效代码 - DIP14,.3 DIP14,.3 DIP14,.3 DIP14,.3 DIP14,.3 - - -
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - -
封装形式 - IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE - - -
包装方法 - TUBE TUBE TUBE TUBE TUBE - - -
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
电源 - 5 V 2/6 V 2/6 V 2/6 V 5 V - - -
最大电源电流(ICC) - 0.04 mA 0.04 mA 0.04 mA 0.04 mA 0.04 mA - - -
Prop。Delay @ Nom-Sup - 42 ns 30 ns 39 ns 39 ns 42 ns - - -
传播延迟(tpd) - 42 ns 195 ns 195 ns 195 ns 42 ns - - -
认证状态 - Qualified Qualified Not Qualified Not Qualified Not Qualified - - -
施密特触发器 - NO NO NO NO NO - - -
座面最大高度 - 5.08 mm 5.08 mm 5.08 mm 5.08 mm 5.08 mm - - -
最大供电电压 (Vsup) - 5.5 V 6 V 6 V 6 V 5.5 V - - -
最小供电电压 (Vsup) - 4.5 V 2 V 2 V 2 V 4.5 V - - -
标称供电电压 (Vsup) - 5 V 4.5 V 4.5 V 4.5 V 5 V - - -
表面贴装 - NO NO NO NO NO - - -
技术 - CMOS CMOS CMOS CMOS CMOS - - -
温度等级 - MILITARY MILITARY MILITARY MILITARY MILITARY - - -
端子形式 - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - - -
端子节距 - 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm - - -
端子位置 - DUAL DUAL DUAL DUAL DUAL - - -
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
宽度 - 6.67 mm 7.62 mm 7.62 mm 7.62 mm 6.67 mm - - -
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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