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H5PS1G83EFR-Y5Q

DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60

器件类别:存储    存储   

厂商名称:SK Hynix(海力士)

厂商官网:http://www.hynix.com/eng/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SK Hynix(海力士)
零件包装代码
BGA
包装说明
TFBGA, BGA60,9X11,32
针数
60
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
MULTI BANK PAGE BURST
最长访问时间
0.45 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
333 MHz
I/O 类型
COMMON
交错的突发长度
4,8
JESD-30 代码
R-PBGA-B60
JESD-609代码
e1
长度
11.4 mm
内存密度
1073741824 bit
内存集成电路类型
DDR DRAM
内存宽度
8
功能数量
1
端口数量
1
端子数量
60
字数
134217728 words
字数代码
128000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
128MX8
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装等效代码
BGA60,9X11,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)
260
电源
1.8 V
认证状态
Not Qualified
刷新周期
8192
座面最大高度
1.2 mm
自我刷新
YES
连续突发长度
4,8
最大供电电压 (Vsup)
1.9 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
20
宽度
8 mm
Base Number Matches
1
参数对比
与H5PS1G83EFR-Y5Q相近的元器件有:H5PS1G83EFR-C4P、H5PS1G83EFR-C4Q、H5PS1G83EFR-S6Q、H5PS1G83EFR-S6P、H5PS1G83EFR-E3P、H5PS1G83EFR-E3Q、H5PS1G83EFR-G7P、H5PS1G83EFR-S5Q、H5PS1G83EFR-Y5P。描述及对比如下:
型号 H5PS1G83EFR-Y5Q H5PS1G83EFR-C4P H5PS1G83EFR-C4Q H5PS1G83EFR-S6Q H5PS1G83EFR-S6P H5PS1G83EFR-E3P H5PS1G83EFR-E3Q H5PS1G83EFR-G7P H5PS1G83EFR-S5Q H5PS1G83EFR-Y5P
描述 DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士)
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
包装说明 TFBGA, BGA60,9X11,32 HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32
针数 60 60 60 60 60 60 60 60 60 60
Reach Compliance Code unknown compliant compliant unknown unknown compliant compliant unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
最长访问时间 0.45 ns 0.5 ns 0.5 ns 0.4 ns 0.4 ns 0.6 ns 0.6 ns 0.35 ns 0.45 ns 0.45 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 代码 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60
长度 11.4 mm 11.4 mm 11.4 mm 11.4 mm 11.4 mm 11.4 mm 11.4 mm 11.4 mm 11.4 mm 11.4 mm
内存密度 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit
内存集成电路类型 DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 8 8 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1 1
端子数量 60 60 60 60 60 60 60 60 60 60
字数 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words
字数代码 128000000 128000000 128000000 128000000 128000000 128000000 128000000 128000000 128000000 128000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
组织 128MX8 128MX8 128MX8 128MX8 128MX8 128MX8 128MX8 128MX8 128MX8 128MX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 260 NOT SPECIFIED NOT SPECIFIED 260 260 NOT SPECIFIED NOT SPECIFIED 260 260 260
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES YES YES YES YES YES YES
最大供电电压 (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL OTHER INDUSTRIAL INDUSTRIAL OTHER OTHER INDUSTRIAL OTHER INDUSTRIAL OTHER
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 20 NOT SPECIFIED NOT SPECIFIED 20 20 NOT SPECIFIED NOT SPECIFIED 20 20 20
宽度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
最大时钟频率 (fCLK) 333 MHz - - 400 MHz 400 MHz - - 533 MHz 400 MHz 333 MHz
I/O 类型 COMMON - - COMMON COMMON - - COMMON COMMON COMMON
交错的突发长度 4,8 - - 4,8 4,8 - - 4,8 4,8 4,8
JESD-609代码 e1 - - e1 e1 - - e1 e1 e1
输出特性 3-STATE - - 3-STATE 3-STATE - - 3-STATE 3-STATE 3-STATE
封装等效代码 BGA60,9X11,32 - - BGA60,9X11,32 BGA60,9X11,32 - - BGA60,9X11,32 BGA60,9X11,32 BGA60,9X11,32
电源 1.8 V - - 1.8 V 1.8 V - - 1.8 V 1.8 V 1.8 V
认证状态 Not Qualified - - Not Qualified Not Qualified - - Not Qualified Not Qualified Not Qualified
刷新周期 8192 - - 8192 8192 - - 8192 8192 8192
连续突发长度 4,8 - - 4,8 4,8 - - 4,8 4,8 4,8
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) - - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) - - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
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