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HN4C06JGR

TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal

器件类别:分立半导体    晶体管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
厂商名称
Toshiba(东芝)
包装说明
SMALL OUTLINE, R-PDSO-G5
针数
5
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW NOISE
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
120 V
配置
COMMON EMITTER, 2 ELEMENTS
最小直流电流增益 (hFE)
200
JESD-30 代码
R-PDSO-G5
元件数量
2
端子数量
5
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
功耗环境最大值
0.3 W
最大功率耗散 (Abs)
0.3 W
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
VCEsat-Max
0.3 V
参数对比
与HN4C06JGR相近的元器件有:HN4C06J-BL(TE85L,F、HN4C06J-GR、HN4C06J-GR(TE85L,F、HN4C06J-BL、HN4C06JBL。描述及对比如下:
型号 HN4C06JGR HN4C06J-BL(TE85L,F HN4C06J-GR HN4C06J-GR(TE85L,F HN4C06J-BL HN4C06JBL
描述 TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal TRANS 2 NPN 120V 100MA SC74A TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal
厂商名称 Toshiba(东芝) - Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-G5 - SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
针数 5 - 5 - 5 5
Reach Compliance Code unknown - unknown unknown unknown unknown
其他特性 LOW NOISE - LOW NOISE LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 120 V - 120 V 120 V 120 V 120 V
配置 COMMON EMITTER, 2 ELEMENTS - COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS
最小直流电流增益 (hFE) 200 - 200 200 350 350
JESD-30 代码 R-PDSO-G5 - R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
元件数量 2 - 2 2 2 2
端子数量 5 - 5 5 5 5
最高工作温度 150 °C - 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN - NPN NPN NPN NPN
功耗环境最大值 0.3 W - 0.3 W 0.3 W 0.3 W 0.3 W
最大功率耗散 (Abs) 0.3 W - 0.3 W 0.3 W 0.3 W 0.3 W
认证状态 Not Qualified - Not Qualified - Not Qualified Not Qualified
表面贴装 YES - YES YES YES YES
端子形式 GULL WING - GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL - DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON - SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz - 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.3 V - 0.3 V 0.3 V 0.3 V 0.3 V
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