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M58LR128HT

128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

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参数对比
与M58LR128HT相近的元器件有:M58LR128HT85ZB5E、M58LR128HB85ZB5F、M58LR128HB、M58LR128HT85ZB5F、M58LR128HB85ZB5E。描述及对比如下:
型号 M58LR128HT M58LR128HT85ZB5E M58LR128HB85ZB5F M58LR128HB M58LR128HT85ZB5F M58LR128HB85ZB5E
描述 128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories 128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories 128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories 128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories 128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories 128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
是否Rohs认证 - 符合 符合 - 符合 符合
厂商名称 - ST(意法半导体) ST(意法半导体) - ST(意法半导体) ST(意法半导体)
零件包装代码 - BGA BGA - BGA BGA
包装说明 - 7.70 X 9 MM, 0.75 MM PITCH, ROHS COMPLIANT, VFBGA-56 7.70 X 9 MM, 0.75 MM PITCH, ROHS COMPLIANT, VFBGA-56 - 7.70 X 9 MM, 0.75 MM PITCH, ROHS COMPLIANT, VFBGA-56 7.70 X 9 MM, 0.75 MM PITCH, ROHS COMPLIANT, VFBGA-56
针数 - 56 56 - 56 56
Reach Compliance Code - compli compli - compli compli
ECCN代码 - 3A991.B.1.A EAR99 - 3A991.B.1.A 3A991.B.1.A
最长访问时间 - 85 ns 85 ns - 85 ns 85 ns
其他特性 - SYNCHRONOUS BURST MODE OPERATION POSSIBLE SYNCHRONOUS BURST MODE OPERATION POSSIBLE - SYNCHRONOUS BURST MODE OPERATION POSSIBLE SYNCHRONOUS BURST MODE OPERATION POSSIBLE
启动块 - TOP BOTTOM - TOP BOTTOM
命令用户界面 - YES YES - YES YES
通用闪存接口 - YES YES - YES YES
数据轮询 - NO NO - NO NO
JESD-30 代码 - R-PBGA-B56 R-PBGA-B56 - R-PBGA-B56 R-PBGA-B56
长度 - 9 mm 9 mm - 9 mm 9 mm
内存密度 - 134217728 bi 134217728 bi - 134217728 bi 134217728 bi
内存集成电路类型 - FLASH FLASH - FLASH FLASH
内存宽度 - 16 16 - 16 16
功能数量 - 1 1 - 1 1
部门数/规模 - 4,127 4,127 - 4,127 4,127
端子数量 - 56 56 - 56 56
字数 - 8388608 words 8388608 words - 8388608 words 8388608 words
字数代码 - 8000000 8000000 - 8000000 8000000
工作模式 - ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 - 85 °C 85 °C - 85 °C 85 °C
最低工作温度 - -25 °C -25 °C - -25 °C -25 °C
组织 - 8MX16 8MX16 - 8MX16 8MX16
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - VFBGA VFBGA - VFBGA VFBGA
封装等效代码 - BGA56,7X8,30 BGA56,7X8,30 - BGA56,7X8,30 BGA56,7X8,30
封装形状 - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 - GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH - GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
页面大小 - 4 words 4 words - 4 words 4 words
并行/串行 - PARALLEL PARALLEL - PARALLEL PARALLEL
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
电源 - 1.8 V 1.8 V - 1.8 V 1.8 V
编程电压 - 1.8 V 1.8 V - 1.8 V 1.8 V
认证状态 - Not Qualified Not Qualified - Not Qualified Not Qualified
座面最大高度 - 1 mm 1 mm - 1 mm 1 mm
部门规模 - 16K,64K 16K,64K - 16K,64K 16K,64K
最大待机电流 - 0.00005 A 0.00005 A - 0.00005 A 0.00005 A
最大压摆率 - 0.055 mA 0.055 mA - 0.055 mA 0.055 mA
最大供电电压 (Vsup) - 2 V 2 V - 2 V 2 V
最小供电电压 (Vsup) - 1.7 V 1.7 V - 1.7 V 1.7 V
标称供电电压 (Vsup) - 1.8 V 1.8 V - 1.8 V 1.8 V
表面贴装 - YES YES - YES YES
技术 - CMOS CMOS - CMOS CMOS
温度等级 - COMMERCIAL EXTENDED COMMERCIAL EXTENDED - COMMERCIAL EXTENDED COMMERCIAL EXTENDED
端子形式 - BALL BALL - BALL BALL
端子节距 - 0.75 mm 0.75 mm - 0.75 mm 0.75 mm
端子位置 - BOTTOM BOTTOM - BOTTOM BOTTOM
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
切换位 - NO NO - NO NO
类型 - NOR TYPE NOR TYPE - NOR TYPE NOR TYPE
宽度 - 7.7 mm 7.7 mm - 7.7 mm 7.7 mm
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