BUK7V4R2-40H
11 February 2021
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in
LFPAK56D (half-bridge configuration)
Product data sheet
1. General description
Dual, standard level N-channel MOSFET in an LFPAK56D package
(half-bridge configuration), using Trench 9 TrenchMOS technology. This
product has been designed and qualified to AEC-Q101.
An internal connection is made between the source (S1) of the high-
side FET to the drain (D2) of the low-side FET, making the device ideal
to use as a half-bridge switch in high-performance automotive PWM
applications.
D1
G1
S1, D2
G2
S2
aaa-028081
2. Features and benefits
•
LFPAK56D package with half-bridge configuration enables:
•
Reduced PCB layout complexity
•
PCB shrinkage through reduced component footprint for 3-phase motor drive
•
Improved system level R
th(j-amb)
due to optimized package design
•
Lower parasitic inductance to support higher efficiency
•
Footprint compatibility with LFPAK56D Dual package
Advanced AEC-Q101 grade Trench 9 silicon technology:
•
Low power losses, high power density
•
Superior avalanche performance
•
Repetitive avalanche rated
LFPAK copper clip packaging provides high robustness and reliability
Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)
•
•
•
3. Applications
•
•
•
•
•
12 V automotive systems
Powertrain, chassis, body and infotainment applications
Brushless or brushed DC motor drive
DC-to-DC systems
LED lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Limiting values FET1 and FET2
V
DS
I
D
P
tot
drain-source voltage
drain current
total power dissipation
25 °C ≤ T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
[1]
-
-
-
-
-
-
40
98
85
V
A
W
Conditions
Min
Typ
Max
Unit
Nexperia
BUK7V4R2-40H
Parameter
drain-source on-state
resistance
gate-drain charge
Conditions
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
I
D
= 20 A; V
DS
= 32 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V; T
j
= 25 °C
Min
2.5
Typ
3.5
Max
4.2
Unit
mΩ
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
Symbol
R
DSon
Static characteristics FET1 and FET2
Dynamic characteristics FET1 and FET2
Q
GD
-
4.7
9.4
nC
Source-drain diode FET1 and FET2
Q
r
[1]
recovered charge
-
9.2
-
nC
98A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
4
5
6
7
8
S2
G2
S1
G1
D1
D1
S1, D2
S1, D1
source2
gate2
source1
gate1
drain1
drain1
source1, drain2
source1, drain2
1
2
3
4
Simplified outline
8
7
6
5
Graphic symbol
D1
G1
S1, D2
G2
S2
aaa-028081
LFPAK56D; Dual
LFPAK (SOT1205)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7V4R2-40H
LFPAK56D;
Dual LFPAK
Description
plastic, single ended surface mounted package (LFPAK56D); 8
leads
Version
SOT1205
7. Marking
Table 4. Marking codes
Type number
BUK7V4R2-40H
Marking code
74V240H
BUK7V4R2-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2021. All rights reserved
Product data sheet
11 February 2021
2 / 13
Nexperia
BUK7V4R2-40H
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
P
tot
I
D
I
DM
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Parameter
drain-source voltage
gate-source voltage
total power dissipation
drain current
peak drain current
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
[2] [3]
Conditions
25 °C ≤ T
j
≤ 175 °C
DC; T
j
= 25 °C
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; T
mb
= 100 °C;
Fig. 2
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 3
[1]
Min
-
-20
-
-
-
-
-55
-55
-
-
-
Max
40
20
85
98
69.5
393
175
175
85
393
42.3
Unit
V
V
W
A
A
A
°C
°C
A
A
mJ
Limiting values FET1 and FET2
Source-drain diode FET1 and FET2
Avalanche ruggedness FET1 and FET2
non-repetitive drain-
I
D
= 82.6 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
source avalanche energy V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
non-repetitive avalanche V
sup
= 40 V; V
GS
= 10 V; T
j(init)
= 25 °C;
current
R
GS
= 50 Ω
I
AS
[1]
[2]
[3]
[4]
[4]
-
82.6
A
98A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
Protected by 100% test
120
P
der
(%)
80
03aa16
I
D
(A)
100
aaa-032380
80
60
40
40
20
0
0
50
100
150
T
mb
(°C)
200
0
0
25
50
75
100
125
150 175
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
V
GS
≥ 10 V
(1) 98A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Continuous drain current as a function of
mounting base temperature, FET1 and FET2
BUK7V4R2-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2021. All rights reserved
Product data sheet
11 February 2021
3 / 13
Nexperia
BUK7V4R2-40H
aaa-032382
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
10
3
Limit R
DSon
= V
DS
/ I
D
10
2
t
p
= 10 µs
100 µs
10
DC
1
1 ms
10 ms
100 ms
I
D
(A)
10
-1
10
-1
1
10
V
DS
(V)
10
2
T
mb
= 25 °C; I
DM
is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and
FET2
I
AL
(A)
10
2
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(1)
10
(2)
1
(3)
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
(1) T
j (init)
= 25 °C; (2) T
j (init)
= 150 °C; (3) Repetitive Avalanche
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
R
th(j-mb)
Conditions
Min
-
Typ
1.64
Max
1.76
Unit
K/W
thermal resistance from
Fig. 5
junction to mounting
base
BUK7V4R2-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2021. All rights reserved
Product data sheet
11 February 2021
4 / 13
Nexperia
BUK7V4R2-40H
aaa-032383
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
10
Z
th(j-mb)
(K/W)
1 δ = 0.5
0.2
0.1
10
-1
0.05
0.02
single shot
10
-2
10
-6
t
p
10
-4
10
-3
10
-2
10
-1
t
T
t
p
(s)
1
P
δ=
t
p
T
10
-5
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and
FET2
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics FET1 and FET2
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -40 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
V
GS(th)
gate-source threshold
voltage
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 25 °C;
Fig. 9;
Fig. 10
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 175 °C;
Fig. 10
I
D
= 1 mA; V
DS
=V
GS
; T
j
= -55 °C;
Fig. 10
I
DSS
drain leakage current
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 16 V; V
GS
= 0 V; T
j
= 125 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 20 A; T
j
= 105 °C;
Fig. 12
V
GS
= 10 V; I
D
= 20 A; T
j
= 125 °C;
Fig. 12
V
GS
= 10 V; I
D
= 20 A; T
j
= 175 °C;
Fig. 12
R
G
Q
G(tot)
Q
GS
Q
GD
gate resistance
total gate charge
gate-source charge
gate-drain charge
f = 1 MHz; T
j
= 25 °C
I
D
= 20 A; V
DS
= 32 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
Dynamic characteristics FET1 and FET2
-
-
-
26
7.8
4.7
37
12
9.4
nC
nC
nC
40
-
36
2.4
1
-
-
-
-
-
-
2.5
3.4
3.7
4.5
0.72
43
40.5
40
3
-
-
0.007
0.3
53
2
2
3.5
5.2
5.8
7.2
1.8
-
-
-
3.6
-
4.3
1
10
500
100
100
4.2
6.4
7.2
8.8
4.5
V
V
V
V
V
V
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
Conditions
Min
Typ
Max
Unit
BUK7V4R2-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2021. All rights reserved
Product data sheet
11 February 2021
5 / 13
