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VN3515L

MOSFET 350V 15Ohm

器件类别:半导体    分立半导体   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件:VN3515L

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Microchip(微芯科技)
产品种类
Product Category
MOSFET
RoHS
N
技术
Technology
Si
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
350 V
Id - Continuous Drain Current
150 mA
Rds On - Drain-Source Resistance
15 Ohms
Vgs - Gate-Source Voltage
20 V
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
Configuration
Single
Channel Mode
Enhancement
高度
Height
5.33 mm
长度
Length
5.21 mm
Transistor Type
1 N-Channel
类型
Type
FET
宽度
Width
4.19 mm
Fall Time
65 ns
Pd-功率耗散
Pd - Power Dissipation
1 W
Rise Time
20 ns
工厂包装数量
Factory Pack Quantity
1000
Typical Turn-Off Delay Time
65 ns
Typical Turn-On Delay Time
20 ns
单位重量
Unit Weight
0.007760 oz
参数对比
与VN3515L相近的元器件有:VN3515L-P002、VN3515L-G-P013、VN3515L-P014-G、VN3515L-G、VN3515L-G-P002、VN3515L-P003、VN3515L-P013、VN3515L-G P003。描述及对比如下:
型号 VN3515L VN3515L-P002 VN3515L-G-P013 VN3515L-P014-G VN3515L-G VN3515L-G-P002 VN3515L-P003 VN3515L-P013 VN3515L-G P003
描述 MOSFET 350V 15Ohm MOSFET 350V 15Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 350V 15Ohm MOSFET 350V 15Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 350V 15Ohm MOSFET 350V 15Ohm MOSFET N-CH Enhancmnt Mode MOSFET
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value - Attribute Value Attribute Value Attribute Value -
制造商
Manufacturer
Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) - Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) -
产品种类
Product Category
MOSFET MOSFET MOSFET MOSFET - MOSFET MOSFET MOSFET -
RoHS N N Details Details - Details N N -
技术
Technology
Si Si Si Si - Si Si Si -
安装风格
Mounting Style
Through Hole Through Hole Through Hole Through Hole - Through Hole Through Hole Through Hole -
封装 / 箱体
Package / Case
TO-92-3 TO-92-3 TO-92-3 TO-92-3 - TO-92-3 TO-92-3 TO-92-3 -
Number of Channels 1 Channel 1 Channel 1 Channel 1 Channel - 1 Channel 1 Channel 1 Channel -
Transistor Polarity N-Channel N-Channel N-Channel N-Channel - N-Channel N-Channel N-Channel -
Vds - Drain-Source Breakdown Voltage 350 V 350 V 350 V 350 V - 350 V 350 V 350 V -
Id - Continuous Drain Current 150 mA 150 mA 150 mA 150 mA - 150 mA 150 mA 150 mA -
Rds On - Drain-Source Resistance 15 Ohms 15 Ohms 15 Ohms 15 Ohms - 15 Ohms 15 Ohms 15 Ohms -
Vgs - Gate-Source Voltage 20 V 20 V 20 V 20 V - 20 V 20 V 20 V -
最小工作温度
Minimum Operating Temperature
- 55 C - 55 C - 55 C - 55 C - - 55 C - 55 C - 55 C -
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C + 150 C + 150 C - + 150 C + 150 C + 150 C -
Configuration Single Single Single Single - Single Single Single -
Channel Mode Enhancement Enhancement Enhancement Enhancement - Enhancement Enhancement Enhancement -
高度
Height
5.33 mm 5.33 mm 5.33 mm - - 5.33 mm 5.33 mm 5.33 mm -
长度
Length
5.21 mm 5.21 mm 5.21 mm - - 5.21 mm 5.21 mm 5.21 mm -
Transistor Type 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel - 1 N-Channel 1 N-Channel 1 N-Channel -
类型
Type
FET FET - FET - - FET FET -
宽度
Width
4.19 mm 4.19 mm 4.19 mm - - 4.19 mm 4.19 mm 4.19 mm -
Fall Time 65 ns 65 ns 65 ns 65 ns - 65 ns 65 ns 65 ns -
Pd-功率耗散
Pd - Power Dissipation
1 W 1 W 1 W 1 W - 1 W 1 W 1 W -
Rise Time 20 ns 20 ns 20 ns 20 ns - 20 ns 20 ns 20 ns -
工厂包装数量
Factory Pack Quantity
1000 2000 2000 2000 - 2000 2000 2000 -
Typical Turn-Off Delay Time 65 ns 65 ns 65 ns 65 ns - 65 ns 65 ns 65 ns -
Typical Turn-On Delay Time 20 ns 20 ns 20 ns 20 ns - 20 ns 20 ns 20 ns -
单位重量
Unit Weight
0.007760 oz 0.007760 oz 0.016000 oz 0.016000 oz - 0.016000 oz 0.007760 oz 0.007760 oz -
产品
Product
- MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal - MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal -
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