MOSFET N-CH Enhancmnt Mode MOSFET
厂商名称:Microchip(微芯科技)
厂商官网:https://www.microchip.com
器件标准:
下载文档型号 | VN3515L-G P003 | VN3515L-P002 | VN3515L-G-P013 | VN3515L | VN3515L-P014-G | VN3515L-G | VN3515L-G-P002 | VN3515L-P003 | VN3515L-P013 |
---|---|---|---|---|---|---|---|---|---|
描述 | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 350V 15Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 350V 15Ohm | MOSFET 350V 15Ohm | MOSFET 350V 15Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 350V 15Ohm | MOSFET 350V 15Ohm |
Product Attribute | - | Attribute Value | Attribute Value | Attribute Value | Attribute Value | - | Attribute Value | Attribute Value | Attribute Value |
制造商 Manufacturer |
- | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | - | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) |
产品种类 Product Category |
- | MOSFET | MOSFET | MOSFET | MOSFET | - | MOSFET | MOSFET | MOSFET |
RoHS | - | N | Details | N | Details | - | Details | N | N |
技术 Technology |
- | Si | Si | Si | Si | - | Si | Si | Si |
安装风格 Mounting Style |
- | Through Hole | Through Hole | Through Hole | Through Hole | - | Through Hole | Through Hole | Through Hole |
封装 / 箱体 Package / Case |
- | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | - | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | - | 1 Channel | 1 Channel | 1 Channel | 1 Channel | - | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel | N-Channel | N-Channel | - | N-Channel | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | - | 350 V | 350 V | 350 V | 350 V | - | 350 V | 350 V | 350 V |
Id - Continuous Drain Current | - | 150 mA | 150 mA | 150 mA | 150 mA | - | 150 mA | 150 mA | 150 mA |
Rds On - Drain-Source Resistance | - | 15 Ohms | 15 Ohms | 15 Ohms | 15 Ohms | - | 15 Ohms | 15 Ohms | 15 Ohms |
Vgs - Gate-Source Voltage | - | 20 V | 20 V | 20 V | 20 V | - | 20 V | 20 V | 20 V |
最小工作温度 Minimum Operating Temperature |
- | - 55 C | - 55 C | - 55 C | - 55 C | - | - 55 C | - 55 C | - 55 C |
最大工作温度 Maximum Operating Temperature |
- | + 150 C | + 150 C | + 150 C | + 150 C | - | + 150 C | + 150 C | + 150 C |
Configuration | - | Single | Single | Single | Single | - | Single | Single | Single |
Channel Mode | - | Enhancement | Enhancement | Enhancement | Enhancement | - | Enhancement | Enhancement | Enhancement |
高度 Height |
- | 5.33 mm | 5.33 mm | 5.33 mm | - | - | 5.33 mm | 5.33 mm | 5.33 mm |
长度 Length |
- | 5.21 mm | 5.21 mm | 5.21 mm | - | - | 5.21 mm | 5.21 mm | 5.21 mm |
产品 Product |
- | MOSFET Small Signal | MOSFET Small Signal | - | MOSFET Small Signal | - | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Transistor Type | - | 1 N-Channel | 1 N-Channel | 1 N-Channel | 1 N-Channel | - | 1 N-Channel | 1 N-Channel | 1 N-Channel |
类型 Type |
- | FET | - | FET | FET | - | - | FET | FET |
宽度 Width |
- | 4.19 mm | 4.19 mm | 4.19 mm | - | - | 4.19 mm | 4.19 mm | 4.19 mm |
Fall Time | - | 65 ns | 65 ns | 65 ns | 65 ns | - | 65 ns | 65 ns | 65 ns |
Pd-功率耗散 Pd - Power Dissipation |
- | 1 W | 1 W | 1 W | 1 W | - | 1 W | 1 W | 1 W |
Rise Time | - | 20 ns | 20 ns | 20 ns | 20 ns | - | 20 ns | 20 ns | 20 ns |
工厂包装数量 Factory Pack Quantity |
- | 2000 | 2000 | 1000 | 2000 | - | 2000 | 2000 | 2000 |
Typical Turn-Off Delay Time | - | 65 ns | 65 ns | 65 ns | 65 ns | - | 65 ns | 65 ns | 65 ns |
Typical Turn-On Delay Time | - | 20 ns | 20 ns | 20 ns | 20 ns | - | 20 ns | 20 ns | 20 ns |
单位重量 Unit Weight |
- | 0.007760 oz | 0.016000 oz | 0.007760 oz | 0.016000 oz | - | 0.016000 oz | 0.007760 oz | 0.007760 oz |