VN3515L-G-P013,VN3515L-G-P013 pdf中文资料,VN3515L-G-P013引脚图,VN3515L-G-P013电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

Product Attribute

Attribute Value

制造商
Manufacturer

Microchip(微芯科技)

产品种类
Product Category

MOSFET

RoHS

Details

技术
Technology

安装风格
Mounting Style

Through Hole

封装 / 箱体
Package / Case

TO-92-3

Number of Channels

1 Channel

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

350 V

Id - Continuous Drain Current

150 mA

Rds On - Drain-Source Resistance

15 Ohms

Vgs - Gate-Source Voltage

20 V

最小工作温度
Minimum Operating Temperature

- 55 C

最大工作温度
Maximum Operating Temperature

+ 150 C

Configuration

Single

Channel Mode

Enhancement

系列
Packaging

Reel

高度
Height

5.33 mm

长度
Length

5.21 mm

产品
Product

MOSFET Small Signal

Transistor Type

1 N-Channel

宽度
Width

4.19 mm

Fall Time

65 ns

Pd-功率耗散
Pd - Power Dissipation

1 W

Rise Time

20 ns

工厂包装数量
Factory Pack Quantity

2000

Typical Turn-Off Delay Time

65 ns

Typical Turn-On Delay Time

20 ns

单位重量
Unit Weight

0.016000 oz

参数对比

与VN3515L-G-P013相近的元器件有：VN3515L-P002、VN3515L、VN3515L-P014-G、VN3515L-G、VN3515L-G-P002、VN3515L-P003、VN3515L-P013、VN3515L-G P003。描述及对比如下：

型号	VN3515L-G-P013	VN3515L-P002	VN3515L	VN3515L-P014-G	VN3515L-G	VN3515L-G-P002	VN3515L-P003	VN3515L-P013	VN3515L-G P003
描述	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET 350V 15Ohm	MOSFET 350V 15Ohm	MOSFET 350V 15Ohm	MOSFET 350V 15Ohm	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET 350V 15Ohm	MOSFET 350V 15Ohm	MOSFET N-CH Enhancmnt Mode MOSFET
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-	Attribute Value	Attribute Value	Attribute Value	-
制造商 Manufacturer	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)	-	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)	-
产品种类 Product Category	MOSFET	MOSFET	MOSFET	MOSFET	-	MOSFET	MOSFET	MOSFET	-
RoHS	Details	N	N	Details	-	Details	N	N	-
技术 Technology	Si	Si	Si	Si	-	Si	Si	Si	-
安装风格 Mounting Style	Through Hole	Through Hole	Through Hole	Through Hole	-	Through Hole	Through Hole	Through Hole	-
封装 / 箱体 Package / Case	TO-92-3	TO-92-3	TO-92-3	TO-92-3	-	TO-92-3	TO-92-3	TO-92-3	-
Number of Channels	1 Channel	1 Channel	1 Channel	1 Channel	-	1 Channel	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	N-Channel	N-Channel	-	N-Channel	N-Channel	N-Channel	-
Vds - Drain-Source Breakdown Voltage	350 V	350 V	350 V	350 V	-	350 V	350 V	350 V	-
Id - Continuous Drain Current	150 mA	150 mA	150 mA	150 mA	-	150 mA	150 mA	150 mA	-
Rds On - Drain-Source Resistance	15 Ohms	15 Ohms	15 Ohms	15 Ohms	-	15 Ohms	15 Ohms	15 Ohms	-
Vgs - Gate-Source Voltage	20 V	20 V	20 V	20 V	-	20 V	20 V	20 V	-
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C	- 55 C	- 55 C	-	- 55 C	- 55 C	- 55 C	-
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C	-	+ 150 C	+ 150 C	+ 150 C	-
Configuration	Single	Single	Single	Single	-	Single	Single	Single	-
Channel Mode	Enhancement	Enhancement	Enhancement	Enhancement	-	Enhancement	Enhancement	Enhancement	-
高度 Height	5.33 mm	5.33 mm	5.33 mm	-	-	5.33 mm	5.33 mm	5.33 mm	-
长度 Length	5.21 mm	5.21 mm	5.21 mm	-	-	5.21 mm	5.21 mm	5.21 mm	-
产品 Product	MOSFET Small Signal	MOSFET Small Signal	-	MOSFET Small Signal	-	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	-
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel	1 N-Channel	-	1 N-Channel	1 N-Channel	1 N-Channel	-
宽度 Width	4.19 mm	4.19 mm	4.19 mm	-	-	4.19 mm	4.19 mm	4.19 mm	-
Fall Time	65 ns	65 ns	65 ns	65 ns	-	65 ns	65 ns	65 ns	-
Pd-功率耗散 Pd - Power Dissipation	1 W	1 W	1 W	1 W	-	1 W	1 W	1 W	-
Rise Time	20 ns	20 ns	20 ns	20 ns	-	20 ns	20 ns	20 ns	-
工厂包装数量 Factory Pack Quantity	2000	2000	1000	2000	-	2000	2000	2000	-
Typical Turn-Off Delay Time	65 ns	65 ns	65 ns	65 ns	-	65 ns	65 ns	65 ns	-
Typical Turn-On Delay Time	20 ns	20 ns	20 ns	20 ns	-	20 ns	20 ns	20 ns	-
单位重量 Unit Weight	0.016000 oz	0.007760 oz	0.007760 oz	0.016000 oz	-	0.016000 oz	0.007760 oz	0.007760 oz	-
类型 Type	-	FET	FET	FET	-	-	FET	FET	-