Leiditech
Epitaxial planar die construction
Microsemi
Small Signal Bipolar Transistor, 0.01A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
强茂(PANJIT)
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
Diodes
DIODES INC. - MMBT2222A-7-F - TRANSISTOR; NPN; 40V; 600mA; 300mW; SOT-23
Diodes
DIODES INC. - MMBT2222A-7-F - TRANSISTOR; NPN; 40V; 600mA; 300mW; SOT-23
DIOTEC
SMD General Purpose NPN Transistors
MCC
600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
MCC
NPN General Purpose Amplifier
UNISONIC TECHNOLOGIES CO.,LTD
NPN GENERAL PURPOSE AMPLIFIER
Diodes Incorporated
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, PLASTIC PACKAGE-3
MCC
NPN General Purpose Amplifier
Diodes Incorporated
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3
Diodes
40V NPN SMALL SIGNAL TRANSISTOR
KEXIN
NPN T r ansistors
SECOS
General Purpose Transistor
Diodes
40V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
BILIN
NPN General Purpose Amplifier
Diodes
40V NPN SMALL SIGNAL TRANSISTOR
DIOTEC
SMD General Purpose NPN Transistors
深圳辰达行电子(MDD)
额定功率：300mW 集电极电流Ic：600mA 集射极击穿电压Vce：40V 晶体管类型：NPN
创基(CBI)
晶体管类型：NPN 集射极击穿电压(Vceo)：40V 集电极电流(Ic)：600mA 功率(Pd)：250mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib)：300mV@150mA,15mA 直流电流增益(hFE@Ic,Vce)：100@150mA,10V 特征频率(fT)：300MHz 工作温度：+150℃@(Tj) 1P(1P表示丝印)
长电科技(JCET)
——
富信半导体(FOSAN)
——
NXP(恩智浦)
NPN switching transistor
NXP(恩智浦)
Headers u0026 Wire Housings 14P STRT SOLDER TAIL HIGH TEMP
Nexperia
额定功率：250mW 集电极电流Ic：600mA 集射极击穿电压Vce：40V 晶体管类型：NPN
Diodes Incorporated
MMBT2222A - NPN switching transistor TO-236 3-Pin
KEXIN
NPN T r ansistors
Diodes
Bipolar Transistors - BJT 40V 300mW
