MOS晶体管 (哥伦比亚大学,英文字幕)
共78课时 15小时8分11秒秒
简介
课程旨在讲述MOS晶体管如何工作,以及如何建模。本课程所提供的知识不仅对器件建模者,而且对高性能电路的设计者都是必不可少的。
章节
- 课时1:About_This_Course (13分44秒)
- 课时2:Intuitive_Overview_of_the_MOS_Transistor (13分40秒)
- 课时3:CMOS_Processes (7分31秒)
- 课时4:Semiconductors__Part_1 (14分8秒)
- 课时5:Semiconductors__Part_2 (10分59秒)
- 课时6:Semiconductors__Part_3 (7分2秒)
- 课时7:Conduction Part 1 (10分54秒)
- 课时8:Conduction Part 2 (6分58秒)
- 课时9:Contact_Potentials (8分54秒)
- 课时10:pn_Junctions_–_Zero_and_Forward_Bias (9分20秒)
- 课时11:pn_Junctions_–Under_Reverse_Bias_–_Part_1 (10分58秒)
- 课时12:pn_Junctions_–Under_Reverse_Bias_–_Part_2 (8分43秒)
- 课时13:The_TwoTerminal_MOS_Structure_–_Flatband_Voltage (10分22秒)
- 课时14:The_TwoTerminal_MOS_Structure_–_Surface_Condition (14分34秒)
- 课时15:The_TwoTerminal_MOS_Structure_–_General_Analysis (13分6秒)
- 课时16:The_TwoTerminal_MOS_Structure_–_Inversion (11分15秒)
- 课时17:The_TwoTerminal_MOS_Structure_–_Strong_Inversion (6分36秒)
- 课时18:The_TwoTerminal_MOS_Structure_–_Weak_Inversion (9分41秒)
- 课时19:The_TwoTerminal_MOS_Structure_–_SmallSignal_Capacitance (13分36秒)
- 课时20:The_ThreeTerminal_MOS_Structure_–_Part_1 (14分32秒)
- 课时21:The_ThreeTerminal_MOS_Structure_–_Part_2 (17分39秒)
- 课时22:Introduction (15分33秒)
- 课时23:Complete_AllRegion_Model (14分34秒)
- 课时24:Simplified_AllRegion_Models (11分7秒)
- 课时25:Strong_Inversion_Models_–_1 (10分35秒)
- 课时26:Strong_Inversion_Models_–_2 (1分57秒)
- 课时27:Strong_Inversion_Models (15分12秒)
- 课时28:Weak_Inversion_Models (13分48秒)
- 课时29:Source_Reference_vs._Body_Reference (6分41秒)
- 课时30:Effective_Mobility (20分53秒)
- 课时31:Additional_Topics (19分38秒)
- 课时32:SmallDimension_Effects__Velocity_Saturation (18分53秒)
- 课时33:SmallDimension_Effects_–_Channel_Length_Modulation (15分43秒)
- 课时34:SmallDimension_Effects__Charge_Sharing (25分32秒)
- 课时35:SmallDimension_Effects_–_DrainInduced_Barrier_Lowering (13分30秒)
- 课时36:SmallDimension_Effects_–_Combining_Several_Effects_Into_One_Model (7分19秒)
- 课时37:SmallDimension_Effects_–_Hot_Carrier_Effects (13分29秒)
- 课时38:SmallDimension_Effects__Velocity_Overshoot_and_Ballistic_Operation (6分52秒)
- 课时39:SmallDimension_Effects__Polysilicon_Depletion (14分16秒)
- 课时40:SmallDimension_Effects__QuantumMechanical_Effects;_Gate_Current (16分17秒)
- 课时41:SmallDimension_Effects_–_Junction_Leakage (11分31秒)
- 课时42:SmallDimension_Effects__Scaling_and_New_Technologies (9分47秒)
- 课时43:Modeling_for_Circuit_Simulation_–_Approaches_and_Properties_of_Good_Models (11分52秒)
- 课时44:Modeling_for_Circuit_Simulation_–_Model_Formulation_Considerations (6分48秒)
- 课时45:Modeling_for_Circuit_Simulation_–_Parameter_Extraction_1 (9分5秒)
- 课时46:Modeling_for_Circuit_Simulation_–_Parameter_Extraction_2 (16分21秒)
- 课时47:Modeling_for_Circuit_Simulation_–_Representative_Compact_Models (5分14秒)
- 课时48:Modeling_for_Circuit_Simulation_–_Benchmark_Tests (4分48秒)
- 课时49:LargeSignal_Dynamic_Operation_–_QuasiStatic_Operation (10分4秒)
- 课时50:LargeSignal_Dynamic_Operation_–_Terminal_Currents_in_QS_Operation (10分52秒)
- 课时51:LargeSignal_Dynamic_Operation_–_Charging_Currents_in_QS_Operation (4分30秒)
- 课时52:LargeSignal_Dynamic_Operation_–_Evaluation_of_Charges (9分23秒)
- 课时53:LargeSignal_Dynamic_Operation_–_Transit_Time (5分22秒)
- 课时54:LargeSignal_Dynamic_Operation_–_Transient_Response_Using_QS_Modeling (13分1秒)
- 课时55:LargeSignal_Dynamic_Operation_–_NonQuasiStatic_Operation (13分47秒)
- 课时56:LargeSignal_Dynamic_Operation_–_Extrinsic_Parasitics (9分38秒)
- 课时57:SmallSignal_Modeling_–_Conductance_Parameter_Definitions_and_Equivalent_C (11分11秒)
- 课时58:SmallSignal_Modeling_–_Conductance_Parameters_Due_to_Gate_and_Body_Leakag (6分58秒)
- 课时59:SmallSignal_Modeling_–Transconductance (19分30秒)
- 课时60:SmallSignal_Modeling_–_SourceDrain_and_Output_Conductance (16分42秒)
- 课时61:SmallSignal_Modeling_–_Capacitance_Definitions_and_Equivalent_Circuits (8分28秒)
- 课时62:SmallSignal_Modeling_–_Capacitance_Evaluation_and_Properties (20分42秒)
- 课时63:SmallSignal_Modeling_–_Complete_Capacitance_Parameter_Set (11分20秒)
- 课时64:SmallSignal_Modeling_–_Complete_QuasiStatic_Model (14分45秒)
- 课时65:SmallSignal_Modeling_–_yParameter_Model (11分53秒)
- 课时66:SmallSignal_Modeling_–_NonQuasiStatic_Model (15分9秒)
- 课时67:SmallSignal_Modeling_–_Model_Comparison (9分37秒)
- 课时68:SmallSignal_Modeling_–_RF_Models (12分17秒)
- 课时69:Noise__Introduction (7分35秒)
- 课时70:Noise__Thermal_Noise (16分58秒)
- 课时71:Noise__HighFrequency_Considerations (5分3秒)
- 课时72:Noise__Flicker_Noise (12分57秒)
- 课时73:Ion_Implantation_–_Threshold_Adjust_Implant (19分17秒)
- 课时74:Halo_Implants (6分57秒)
- 课时75:Well_Proximity_Effect (4分23秒)
- 课时76:Stress_Effects (4分23秒)
- 课时77:Statistical_Variability (22分13秒)
- 课时78:Epilogue (1分49秒)
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