本课程为精品课,您可以登录eeworld继续观看: Optical surface profile measurement继续观看 课时1:Teaser 课时2:Successful MEMS products:accelerometer 课时3:Successful MEMS products:microphone 课时4:Successful MEMS products:BAW 课时5:Case study:thermomechanical microactuator 课时6:Cleanroom basics:introducing the issue of contamination 课时7:Cleanroom basics:cleanroom strategy 课时8:Basic principles of CVD and CVD reactors 课时9:CVD techniques at different operating pressure plasmaenhanced CVD and me 课时10:Atomic layer CVD ALD and thermal oxidation of silicon 课时11:Theoretical concepts of gas flow in CVD reactors 课时12:CVD thin film growth model 课时13:Specific CVD processes for siliconbased materials and diamond 课时14:Thermal oxidation processes of silicon and ALD deposition of specific oxid 课时15:Thermal evaporation:introduction and vapor creation 课时16:Thermal evaporation:film formation and examples 课时17:Thermal evaporation in CMi 课时18:Sputtering:introduction and plasma formation 课时19:Sputtering:spatial zones and Paschen law 课时20:Sputtering:DC RF magnetron 课时21:Sputtering:ion target interactions 课时22:Sputtering:film growth and control parameters 课时23:Sputtering:examples 课时24:Sputtering in CMi 课时25:SUPPLEMENTARY Other PVD methods 课时26:Film growth:atoms arrival and adhesion 课时27:Film growth:stress in thin films 课时28:SUPPLEMENTARY Film growth:growth modes and crystal structure 课时29:Introduction to lithography 课时30:Resist properties and exposure methods 课时31:SUPPLEMENTARY Photoresist sensitivity and modulation transfer function 课时32:UV lithography:direct writing and mask writing 课时33:UV lithography in CMi:mask fabrication 课时34:UV lithography:mask based lithography 课时35:UV lithography in CMi:mask based lithography 课时36:Electron beam lithography:tool overview 课时37:Electron beam lithography:electron optics and beam deflection 课时38:SUPPLEMENTARY Electron beam lithography:tool overview II 课时39:SUPPLEMENTARY Electron beam lithography:design preparation and fracture 课时40:Electron beam lithography:electronsample interactions 课时41:Electron beam lithography:resists 课时42:SUPPLEMENTARY Electron beam lithography:proximity effect 课时43:Alternative patterning methods:scanning probe lithography 课时44:SUPPLEMENTARY Alternative patterning methods:replication methods 课时45:Dry etching in a gas plasma:etching anisotropy 课时46:Deep dry etching of silicon dry etching without a plasma 课时47:Theoretical concepts of plasma generation 课时48:Types of dry etching equipment and plasma sources 课时49:Ion beam etching 课时50:Examples of etching processes for Sibased materials 课时51:Examples of etching processes for organic films and metals 课时52:Anisotropic and isotropic wet etching of Si and applications 课时53:HF bath for SiO2 and glass wet etching 课时54:Isotropic wet etching of silicon in the HNA bath 课时55:Anisotropic wet etching of silicon in alkaline baths 课时56:Etch stop techniques for thin membrane microfabrication and bulk micromach 课时57:Supercritical drying for realization of suspended structures test microst 课时58:Optical microscopy:inspection and dimension measurement 课时59:Optical thin film thickness measurement 课时60:Optical surface profile measurement 课时61:Mechanical surface profile measurement 课时62:Scanning electron microscopy 课时63:Focused ion beam:local cross sectional inspection and measurement 课时64:Electrical characterization 课程介绍共计64课时,11小时13分5秒 微纳加工(半导体制造工艺)瑞士联邦理工学院 本课程将在超净环境中向大家展示最有效的集成电路制造工艺,以教授半导体制造的基本原理和流程。 上传者:桂花蒸 猜你喜欢 无线感测网络 财哥说钛丝 应用于数据包处理的 Smarter Solution 基于灵动MM32L系列低功耗MCU的测温枪应用方案分享 TI DLP® Labs - 汽车:高分辨率前照灯 研讨会: 大大通助你解锁新一代 ADAS 技术 Atmel于2014 CES展会直击之二 SimpleLink Academy:开发您的Bluetooth®低能耗项目 热门下载 [资料]-JIS C2315-2-2010 电气用途的硬化纤维.第2部分:试验方法.pdf [资料]-JIS C8119-1-1999 放电灯具的镇流器(管状荧光灯除外).第1部分:一般要求和安全要求.pdf [资料]-JIS C5965-3-1-2011 光ファイバコネクタ光学互換-第3-1部:シングルモード光ファ.pdf [资料]-JIS T1305-1985 直观式血压监视装置.pdf [资料]-JIS F7304-1996 造船.16K青铜角阀.pdf [资料]-JIS B8224-2005 Boiler feed water and boiler water-Testing methods.pdf [资料]-JIS W0601-1990 Aerospace -- Pipelines -- Identification.pdf [资料]-JIS Z 3264:1998 Copper phosphorus brazing filler metals.pdf [资料]-JIS T3233-2005 静脉血样采集用一次性真空容器.pdf [资料]-JIS B8378-2-2000 气液动力.压缩空气润滑器.第2部分预定列入供应商资料中的产品主要特性的测定试验方法.pdf 热门帖子 SPI时钟控制问题 最近要做一款芯片ADS8320,需要用到SPI,这个芯片与STM32只有三个脚连接,分别是CLKMISOCS没有MOSI脚,它的工作需要主机的时钟来控制,但是SPI只有发送数据才有时钟,我就搞不懂了,怎么不发数据让他工作呢,我都搞了一个星期了还没搞出来,我急了,特来求助,SPI时钟控制问题读一个24位的数据取中间字节,CS用软件控制的方式。楼主好好理解一下这句话:AfallingCSsignalinitiatestheconversionanddatatra 肌肉熊 新人,用51,做指针式万年历,求有资料的大神帮助 新人,用51,做指针式万年历,求有资料的大神帮助。时分秒用指针表盘显示新人,用51,做指针式万年历,求有资料的大神帮助这位同学,伸手党还是不要做了有问题可以提出来讨论就你现在这个阶段需要的资料百度上都有的用51驱动步进电机即可实现。 李晓 HMC5883磁阻传感器使用例子 本例子仅供参考,有什么不足的地方还请多多包涵哈!直奔主题了,程序如下/***************************************************************************原创重庆三峡学院创新实验室唐老鸭***************************************************************************/#include\"lcd1602.h\" tcvsdonnnie 关于JTAG加密 有谁做过Cortex-M4的JTAG加密这一块没,求技术指导,谢谢了关于JTAG加密JTAG也能加密啊,这个还真不了解坐等高手解答哦,说错了,是禁止JTAG在论坛里搜一下,里边有这方面的资料。查看M3的处理方法,是一样的!只要配置下JTAG就可以了,但要注意,JTAG的恢复,否则程序就不能重新写入了! 毛屋堂 Easy 51 软件.rar Easy51软件.rarEasy51软件.rar:P:L看看怎么样,谢谢楼主51单片机C语言开发详解看起来不错的样子啊 Rick37 配气公式及常见液体蒸气配气注入量 一般情况下,由实验箱容积和注入气箱的标准气体的体积,可直接计算出气体浓度:1.测量气体时的配气公式:气体注入量(Vx)按公式(1)计算;单位为毫升。………………………………………(1)2.测量液体蒸气时的配气公式:液体蒸汽注入量(Vx)按公式(2)计算;单位为毫升。………………………………(2)式(1)、(2)中:V测试箱容积,单位为毫升(ml)C液体蒸汽浓度,单位为百万分之一(ppm);扣扣二陆贰柒陆陆贰肆零柒M液体分子量; winsensor 网友正在看 手把手教你学DSP视频教程15 异步时序电路的分析方法 智能台历 实现认证并开始你的功能安全开发 神经控制系统(四) 嵌入式Qt移植之Qt源码编译(1) 贴片焊接技巧培训 3D-ToF空间深度传感器