本课程为精品课,您可以登录eeworld继续观看: CVD thin film growth model继续观看 课时1:Teaser 课时2:Successful MEMS products:accelerometer 课时3:Successful MEMS products:microphone 课时4:Successful MEMS products:BAW 课时5:Case study:thermomechanical microactuator 课时6:Cleanroom basics:introducing the issue of contamination 课时7:Cleanroom basics:cleanroom strategy 课时8:Basic principles of CVD and CVD reactors 课时9:CVD techniques at different operating pressure plasmaenhanced CVD and me 课时10:Atomic layer CVD ALD and thermal oxidation of silicon 课时11:Theoretical concepts of gas flow in CVD reactors 课时12:CVD thin film growth model 课时13:Specific CVD processes for siliconbased materials and diamond 课时14:Thermal oxidation processes of silicon and ALD deposition of specific oxid 课时15:Thermal evaporation:introduction and vapor creation 课时16:Thermal evaporation:film formation and examples 课时17:Thermal evaporation in CMi 课时18:Sputtering:introduction and plasma formation 课时19:Sputtering:spatial zones and Paschen law 课时20:Sputtering:DC RF magnetron 课时21:Sputtering:ion target interactions 课时22:Sputtering:film growth and control parameters 课时23:Sputtering:examples 课时24:Sputtering in CMi 课时25:SUPPLEMENTARY Other PVD methods 课时26:Film growth:atoms arrival and adhesion 课时27:Film growth:stress in thin films 课时28:SUPPLEMENTARY Film growth:growth modes and crystal structure 课时29:Introduction to lithography 课时30:Resist properties and exposure methods 课时31:SUPPLEMENTARY Photoresist sensitivity and modulation transfer function 课时32:UV lithography:direct writing and mask writing 课时33:UV lithography in CMi:mask fabrication 课时34:UV lithography:mask based lithography 课时35:UV lithography in CMi:mask based lithography 课时36:Electron beam lithography:tool overview 课时37:Electron beam lithography:electron optics and beam deflection 课时38:SUPPLEMENTARY Electron beam lithography:tool overview II 课时39:SUPPLEMENTARY Electron beam lithography:design preparation and fracture 课时40:Electron beam lithography:electronsample interactions 课时41:Electron beam lithography:resists 课时42:SUPPLEMENTARY Electron beam lithography:proximity effect 课时43:Alternative patterning methods:scanning probe lithography 课时44:SUPPLEMENTARY Alternative patterning methods:replication methods 课时45:Dry etching in a gas plasma:etching anisotropy 课时46:Deep dry etching of silicon dry etching without a plasma 课时47:Theoretical concepts of plasma generation 课时48:Types of dry etching equipment and plasma sources 课时49:Ion beam etching 课时50:Examples of etching processes for Sibased materials 课时51:Examples of etching processes for organic films and metals 课时52:Anisotropic and isotropic wet etching of Si and applications 课时53:HF bath for SiO2 and glass wet etching 课时54:Isotropic wet etching of silicon in the HNA bath 课时55:Anisotropic wet etching of silicon in alkaline baths 课时56:Etch stop techniques for thin membrane microfabrication and bulk micromach 课时57:Supercritical drying for realization of suspended structures test microst 课时58:Optical microscopy:inspection and dimension measurement 课时59:Optical thin film thickness measurement 课时60:Optical surface profile measurement 课时61:Mechanical surface profile measurement 课时62:Scanning electron microscopy 课时63:Focused ion beam:local cross sectional inspection and measurement 课时64:Electrical characterization 课程介绍共计64课时,11小时13分5秒 微纳加工(半导体制造工艺)瑞士联邦理工学院 本课程将在超净环境中向大家展示最有效的集成电路制造工艺,以教授半导体制造的基本原理和流程。 上传者:桂花蒸 猜你喜欢 创客机器人PK舞台 MCP6V0X高精度运算放大器的产品介绍 PSoC Creator 特色概述:如何使用工作区域窗口 如何在刷式直流电机驱动器中运用集成式的电流感应器 PSoC创意项目展示:助记小秘书 2015电源设计研讨会: 多相同步升压型变换器(1) 野火FreeRTOS内核实现与应用开发实战指南 串联电容降压变换器的设计 热门下载 [资料]-JIS C2315-2-2010 电气用途的硬化纤维.第2部分:试验方法.pdf [资料]-JIS C8119-1-1999 放电灯具的镇流器(管状荧光灯除外).第1部分:一般要求和安全要求.pdf [资料]-JIS C5965-3-1-2011 光ファイバコネクタ光学互換-第3-1部:シングルモード光ファ.pdf [资料]-JIS T1305-1985 直观式血压监视装置.pdf [资料]-JIS F7304-1996 造船.16K青铜角阀.pdf [资料]-JIS B8224-2005 Boiler feed water and boiler water-Testing methods.pdf [资料]-JIS W0601-1990 Aerospace -- Pipelines -- Identification.pdf [资料]-JIS Z 3264:1998 Copper phosphorus brazing filler metals.pdf [资料]-JIS T3233-2005 静脉血样采集用一次性真空容器.pdf [资料]-JIS B8378-2-2000 气液动力.压缩空气润滑器.第2部分预定列入供应商资料中的产品主要特性的测定试验方法.pdf 热门帖子 ADRF5250单极五掷(SP5T)非反射开关ADI ADRF5250单极五掷(SP5T)非反射开关ADIADRF5250是ADI采用硅工艺技术的通用型单极五掷(SP5T)非反射开关。ADRF5250采用4mm4mm、24印刷电路板芯片级封装(LFCSP),能够在100MHz至6GHz范围内提供高隔离和低插入损耗。ADRF5250包括一个负电压检测器,当VSS管脚接地时,能够在增加到VDD管脚的3.3V至5V的单个正电源电压下工作。当向VSS管脚增加-3.3V的外部负电源电压时,能够禁止使用负电压检测器。ADRF5250提供1 SZ003 国产高性能CPU--米尔瑞芯微RK3576赋能AIoT、工业、智能显示终端 随着市场需求不断的变化,各行各业对CPU的要求越来越高,特别是近几年流行的AIOT,为了有更好的用户体验,CPU的算力就要求更高了。今天为大家推荐由米尔基于瑞芯微RK3576处理器推出的MYC-LR3576核心板及开发板。关于RK3576处理器国产CPU,是这些年的骄傲,华为手机全国产化,国人一片呼声,再也不用卡脖子了。RK3576处理器,就是一款由国产是厂商瑞芯微,今年第二季推出的全新通用型的高性能SOC芯片,这款CPU到底有多 blingbling111 按键控制LEI流水灯 本帖最后由lgl80238023于2014-11-2122:36编辑 各位大侠,我写了个按键控制LED流向的程序,不按按键为正常顺序按下后,反向流动,为什么我加了按键后流水灯就不流动了啊?仿真看是可以的,下载到开发板就不流动了,不加按键可以的,求助啊按键控制LEI流水灯题目的写错了,能稍微认真点不粗略看了下,如果仿真可以,下载进去不行的话可能是regKEY_TIME_CNT;这个定义太长了你现在时钟频率多少学习中.................. lgl80238023 Timer实验中TCR的配置 在CCS3.3自带的Timer例程中,配置TCR寄存器中域值,采用的是如下的方式#defineTIMER_CTRLTIMER_TCR_RMK(\\TIMER_TCR_IDLEEN_DEFAULT,/*IDLEEN==0*/\\TIMER_TCR_FUNC_OF(0),/*FUNC==0*/\\TIMER_TCR_TLB_RESET,/*TLB==1,timer mengyang 求助合众达DM642试验箱例程问题 例程里有这样一个语句:intintTemp;Uint32tempDisYbuffer=0x80300000;fTemp=(*(Uint8*)(tempSrcYbuffer+(numLines/2+i-1)*numPixels+(j-1)))+(*(Uint8*)(tempSrcYbuffer+(numLines/2+i-1)*numPixels+j))+(*(Uint8*)(te lcydhr RaspBerry Pi B+初体验(续) 前两天在体验树莓派时遇到了一点问题,今天终于探索出了一点解决方案:【1】.没有中文输入法使用:sudoapt-getinstallscim-pinyin-y命令来安装拼音输入法,然后重启系统。【2】.键盘字符对应稍有差异,几个比较重要的字符不能输入,其中有管道字符|,井号#,@字符(应该是配置键盘布局的问题)输入命令:sudoraspi-config选择4InternationalisationOptions-ChangeKeyboardlayout-G lcofjp 网友正在看 模仿STM32驱动开发实验-实验程序编写 FOOT AND LEG PROTECTION 天线第8讲同相直立天线与八木天线2 实验视频 18.2 - 命令解释器 Gaussian Noise 手把手教你学51单片机与Proteus第十五讲数字温度传感器DS18B20的原理与编程下 ARM Mali 最新 demo 演示:SeeMore 信号处理函数unwrap